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This literature is subject to all applicable copyright laws and is not for resale in any manner.8928A 1998 Dual N & P-Channel Enhancement Mode Field Effect Transistor dual N- and P ) GS field effect transistors are produced using Fairchild s ) GS 4 = V high density process is especially tailored to minimize ) GS on-state resistance and provide superior switching V . ) GS performance. These devices are particularly suited for low . voltage applications such as notebook computer power switching, low in-line power loss, and resistance to T M T M SOT-23 SuperSOT -8 SOT-223 SOIC-16 SuperSOT -6 5 4 FDS 6 3 7 2 11 8 1 T = 25C unless otherwise noted A V 3 0 V V 8 V I A D P 2 W D 1 T J R JA R JC 8A 1998 Fairchild Semiconductor Corporation Rev. B FDS892 C/W 40 (Note 1) Thermal Resistance, Junction-to-Case C/W 78 (Note 1a) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS STG C -55 to 150 Operating and Storage Temperature Range ,T 0.9 (Note 1c) (Note 1b) 1.6 (Note 1a) for Single Operation Power Dissipation Operation for Dual Power Dissipation -20 20 - Pulsed -4 5.5 (Note 1a) Drain Current - Continuous GSS -8 Gate-Source Voltage DSS -20 Drain-Source Voltage Units P-Channel N-Channel Parameter Symbol Absolute Maximum Ratings S1 SO-8 pin G1 S2 G2 D1 D1 D2 D2 SO-8 Dual (N & P-Channel) MOSFET in surface mount package. transients are needed. surface mount package. High power and current handling capability in a widely used management and other battery powered circuits where fast DS(ON) for extremely low R High density cell design DS(ON =-2.5 V =0.072 R DS(ON =-4.5 V 0.055 R V, -20 A, P-Channel - DS(ON proprietary, high cell density, DMOS technology. This very V. =2.5 V =0.038 R DS(ON =4.5 V V =0.030 R 0 V, A,3 N-Channel 5.5 -Channel enhancement mode power These Features General Description 8A FDS892 July