FEP16AT - FEP16JT PIN 1 + CASE PIN 3 FEP16AT - FEP16JT PIN 2 Positive CT Features PIN 1 - CASE PIN 3 Low forward voltage drop. PIN 2 Negative CT Suffix High surge current capacity. 1 2 High current capability. PIN 1 3 AC TO-220AB CASE High reliability. PIN 3 PIN 2 Doubler Suffix Fast Rectifiers (Glass Passivated) Absolute Maximum Ratings* T = 25C unless otherwise noted A Value Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Maximum Repetitive Reverse 50 100 150 200 300 400 500 600 V RRM Voltage I Average Rectified Forward Current, F(AV) 16 A .375 lead length T = 100C A I Non-repetitive Peak Forward Surge FSM Current 200 A 8.3 ms Single Half-Sine-Wave Storage Temperature Range -55 to +150 T C stg T Operating Junction Temperature -55 to +150 C J *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units P Power Dissipation 8.33 W D R Thermal Resistance, Junction to Ambient 15 C/W JA Thermal Resistance, Junction to Lead 2.2 R C/W JL Electrical Characteristics T = 25C unless otherwise noted A Device Symbol Units Parameter 16AT 16BT 16CT 16DT 16FT 16GT 16HT 16JT V Forward Voltage 8.0A 0.95 1.3 1.5 V F t Reverse Recovery Time rr 35 50 ns I = 0.5 A, I = 1.0 A, I = 0.25 A F R RR I Reverse Current rated V R R 10 A T = 25 C A 500 A T = 100C A C Total Capacitance pF T 85 60 V = 4.0. f = 1.0 MHz R 2001 Fairchild Semiconductor Corporation FEP16AT - FEP16JT, Rev. CFEP16AT - FEP16JT Typical Characteristics 200 20 16 160 12 120 SINGLE PHASE HALF WAVE 8 80 60HZ RESISTIVE OR INDUCTIVE LOAD 4 .375 (9.0mm) LEAD 40 LENGTHS 0 0 0 25 50 75 100 125 150 175 12 5 10 20 50 100 Ambient Temperature C Number of Cycles at 60Hz Figure 1. Forward Current Derating Curve Figure 2. Non-Repetitive Surge Current Reverse Characteristics 100 1000 FEP16AT-FEP16DT 100 10 T = 100 C FEP16FT-FEP16JT A 10 1 1 0.1 T = 25 C A T = 25 C A Pulse Width = 300 s 2% Duty Cycle 0.1 0.01 0 20 40 60 80 100 120 140 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 Percent of Rated Peak Reverse Voltage % Forward Voltage, V V F Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs Reverse Voltage 100 90 80 70 FEP16AT-FEP16DT 60 FEP16FT-FEP16JT 50 40 1 2 5 10 20 50 100 Reverse Voltage, V V R Figure 5. Total Capacitance 50 50 trr NONINDUCTIVE NONINDUCTIVE +0.5A (-) DUT 0 Pulse 50V Generator -0.25A (approx) (Note 2) (+) 50 OSCILLOSCOPE NONINDUCTIVE (Note 1) -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation FEP16AT - FEP16JT, Rev. C Average Rectified Forward Current, I A F Forward Current, I A F Total Capacitance, C pF T Peak Forward Surge Current, I A FSM Reverse Current, I mA R