FFPF12UP20DN 6 A, 200 V, Ultrafast Dual Diode February 2006 FFPF12UP20DN tm Features 6 A, 200 V, Ultrafast Dual Diode Ultrafast Recovery t = 35 ns ( I = 6 A) rr F The FFPF12UP20DN is an ultrafast dual diode with low forward Max Forward Voltage, V = 2.2 V ( T = 25C) F C voltage drop and rugged UIS capability. This device is intended Reverse Voltage, V = 200 V RRM for use as freewheeling and clamping diodes in a variety of Avalanche Energy Rated switching power supplies and other power switching applications. It is specially suited for use in switching power RoHS Compliant supplies and industrial applicationa as welder and UPS application. Applications Output Rectifiers Switching Mode Power Supply Free-wheeling Diode Power Switching Circuits 3 1 2 1. Anode 2. Cathode 3. Anode TO-220F 1 1.Anode 2.Cathode 3.Anode Absolute Maximum Ratings (per diode) T = 25C unless otherwise noted C Symbol Parameter Value Unit V Peak Repetitive Reverse Voltage 200 V RRM V Working Peak Reverse Voltage 200 V RWM V DC Blocking Voltage 200 V R I Average Rectified Forward Current T = 120C6 A F(AV) C I Non-repetitive Peak Surge Current 60 A FSM 60Hz Single Half-Sine Wave T T Operating Junction and Storage Temperature - 65 to +150 C J, STG Thermal Characteristics Symbol Parameter Max Unit R Maximum Thermal Resistance, Junction to Case 5.0 C/W JC Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F12UP20DN FFPF12UP20DNTU TO-220F - - 50 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFPF12UP20DN Rev. AFFPF12UP20DN 6 A, 200 V, Ultrafast Dual Diode Electrical Characteristics (per diode) T = 25C unless otherwise noted C Symbol Parameter Min. Typ. Max. Unit V I = 6 A T = 25 C - - 1.15 V F * F C I = 6 A T = 100 C - - 1.0 V F C I V = 200 V T = 25 C - - 100 A R * R C V = 200 V T = 100 C - - 500 A R C t I = 1 A, di/dt = 100 A/s, V = 30 V rr T = 25 C - - 30 ns F CC C I = 6 A, di/dt = 200 A/s, V = 130 V T = 25 C - - 35 ns F CC C t I = 6 A, di/dt = 200 A/s, V = 130 V T = 25 C - 12 - ns a F CC C t T = 25 C - 12 - ns b C Q T = 25 C - 24 - nC rr C W Avalanche Energy (L = 20mH) 10 - - mJ AVL * Pulse Test: Pulse Width=300 s, Duty Cycle=2% Test Circuit and Waveforms 2 www.fairchildsemi.com 2006 Fairchild Semiconductor Corporation FFPF12UP20DN Rev. A