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This literature is subject to all applicable copyright laws and is not for resale in any manner.FFPF15S60S STEALTH II Diode November 2014 FFPF15S60S TM 15 A, 600 V, STEALTH II Diode Power Switching Circuits Features Description Stealth Recovery T = 35ns ( I = 15 A) rr F TM The FFPF15S60S is STEALTH II rectifier with soft recovery Max Forward Voltage, V = 2.6 V ( T = 25C) F C characteristics. It is silicon nitride passivated ion-implanted epi- taxial planar construction. 600V Reverse Voltage and High Reliability This device is intended for use as freewheeling of boost diode in Improved dv/dt Capability switching power supplies and other power swithching applica- RoHS Compliant tions. Their low stored charge and hyperfast soft recovery mini- mize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications General Purpose Switching Mode Power Supply Boost Diode in Continuous Mode Power Factor Corrections TO-220F-2L 1. Cathode 2. Anode 1. Cathode 2. Anode o Absolute Maximum Ratings T = 25 C unless otherwise noted C Symbol Parameter Ratings Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R o I Average Rectified Forward Current T = 52 C 15 A F(AV) C Non-repetitive Peak Surge Current I 150 A FSM 60Hz Single Half-Sine Wave o T , T Operating and Storage Temperature Range -65 to +175 C J STG Thermal Characteristics Symbol Parameter Max. Unit o R Maximum Thermal Resistance, Junction to Case 4.6 C/W JC Package Marking and Ordering Information Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF15S60STU FFPF15S60S TO-220F-2L Tube N/A N/A 50 2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FFPF15S60S Rev. C2