FFPF30UA60S ON Semiconductor

FFPF30UA60S UItrafast II Diode 30 A, 600 V Description The FFPF30UA60S is a ultrafast II diode with low forward voltage www.onsemi.com drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial application. Features 1 2 Ultrafast Recovery, t = 90 ns ( I = 30 A) RR F 1. Cathode 2. Anode Max Forward Voltage, V = 2.2 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Avalanche Energy Rated This Device is PbFree and is RoHS Compliant Applications Boost Diode in PFC and SMPS Welder, UPS and Motor Control Application 12 ABSOLUTE MAXIMUM RATINGS TO220, 2Lead T = 25C unless otherwise noted C CASE 221AS Symbol Parameter Rating Unit VRRM Peak Repetitive Reverse Voltage 600 V MARKING DIAGRAM VRWM Working Peak Reverse Voltage 600 V IF(AV) Average Rectified Forward Current 30 A T = 43C C IFSM Nonrepetitive Peak Surge Current 180 A 60Hz Single HalfSine Wave TJ, TSTG Operating Junction and Storage 65 to C Temperature +175 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Y&Z&3&K assumed, damage may occur and reliability may be affected. F30UA60S Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot F30UA60S = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: May, 2019 Rev. 3 FFPF30UA60S/DFFPF30UA60S THERMAL CHARACTERISTICS T = 25C unless otherwise noted C Symbol Parameter Max. Unit C/W RJC Maximum Thermal Resistance, Junction to Case 2.5 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FFPF30UA60S F30UA60S TO220F2L Tube N/A N/A 50 ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min. Typ. Max. Unit V I = 30 A T = 25C 2.2 V F F C (Note 1) I = 30 A T = 125C 2.0 F C I V = 600 V T = 25C 100 A R R C (Note 1) V = 600 V T = 125C 150 R C t I = 30 A, di /dt = 200 A/s T = 25C 90 ns RR F F C I 8 A RR Q 360 nC RR W Avalanche Energy ( L = 40 mH) 20 mJ AVL Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse: Test Pulse Width = 300 s, Duty Cycle = 2% Test Circuit and Waveforms Figure 1. Diode Reverse Recovery Test Circuit & Waveform Figure 2. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 2