FJP1943 PNP Epitaxial Silicon Transistor January 2009 FJP1943 PNP Epitaxial Silicon Transistor Applications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: I = -17A. C 1 High Power Dissipation : 80watts. TO-220 High Frequency : 30MHz. 1.Base 2.Collector 3.Emitter High Voltage : V = -250V CEO Wide S.O.A for reliable operation. Excellent Gain Linearity for low THD. Complement to FJP5200 Full thermal and electrical Spice models are available. Same transistor is also available in: -- TO264 package, 2SA1943/FJL4215 : 150 watts -- TO3P package, 2SA1962/FJA4213 : 130 watts -- TO220F package, FJPF1943 : 50 watts Absolute Maximum Ratings* T = 25C unless otherwise noted a Symbol Parameter Ratings Units BV Collector-Base Voltage -250 V CBO BV Collector-Emitter Voltage -250 V CEO BV Emitter-Base Voltage -5 V EBO I Collector Current -17 A C I Base Current -1.5 A B P Total Device Dissipation(T =25C) 80 W D C Derate above 25C 0.64 W/C T , T Junction and Storage Temperature - 50 ~ +150 C J STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* T =25C unless otherwise noted a Symbol Parameter Ratings Units R Thermal Resistance, Junction to Case 1.25 C/W JC * Device mounted on minimum pad size h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP1943 Rev. C 1 FJP1943 PNP Epitaxial Silicon Transistor Electrical Characteristics* T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -250 V CBO C E BV Collector-Emitter Breakdown Voltage I =-10mA, R = -250 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -5 V EBO E C I Collector Cut-off Current V =-230V, I =0 -5.0 A CBO CB E I Emitter Cut-off Current V =-5V, I =0 -5.0 A EBO EB C h DC Current Gain V =-5V, I =-1A 55 160 FE1 CE C h DC Current Gain V =-5V, I =-7A 35 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =-8A, I =-0.8A -0.4 -3.0 V CE C B V (on) Base-Emitter On Voltage V =-5V, I =-7A -1.0 -1.5 V BE CE C f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C C Output Capacitance V =-10V, f=1MHz 360 pF ob CB * Pulse Test: Pulse Widt=20s, Duty Cycle2% Ordering Information Part Number Marking Package Packing Method Remarks FJP1943RTU J1943R TO-220 TUBE hFE1 R grade FJP1943OTU J1943O TO-220 TUBE hFE1 O grade 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP1943 Rev. C 2