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This literature is subject to all applicable copyright laws and is not for resale in any manner.FJP2160D ESBC Rated NPN Silicon Transistor January 2016 FJP2160D ESBC Rated NPN Silicon Transistor Applications Description The FJP2160D is a low-cost, high performance power High Voltage and High Speed Power Switch switch designed to provide the best performance when Application used in an ESBC configuration in applications such as: Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, or ignition Application (ESBC ) switches. The power switch is designed to operate up to Smart Meter, Smart Breakers, 1600 volts and up to 3 amps while providing exceptionally HV Industrial Power Supplies low on-resistance and very low switching losses. Motor Driver and Ignition Driver The ESBC switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC Features (FDC655 MOSFET) ESBC MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and V I Equiv R CS(ON) C CS(ON) fast switching, The ESBC configuration further mini- (1) 0.131 V 0.5 A 0.261 mizes the required driving power because it does not have Miller capacitance. Low Equivalent On Resistance Very Fast Switch: 150 KHz The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safe- Squared RBSOA: Up to 1600 V operating-area (RBSOA) and rugged design. The device Avalanche Rated is avalanche rated and has no parasitic transistors so is Low Driving Capacitance, no Miller Capacitance not prone to static dv/dt failures. Typ. 12 pF Capacitance at 200 V) Low Switching Losses Reliable HV switch: No False Triggering due to High dv/dt Transients. C 2 C FJP2160D B 1 B FDC655 TO-220 1 G E 3 1.Base 2.Collector 3.Emitter S (2) Figure 2. Internal Schematic Diagram Figure 3. ESBC Configuration Figure 1. Pin Configuration Ordering Information Part Number Marking Package Packing Method FJP2160DTU J2160D TO-220 3L Tube Notes: 1. Figure of Merit. 2. Other Fairchild MOSFETs can be used in this ESBC application. 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com FJP2160D Rev. 1.1