DATA SHEET www.onsemi.com Photo FET Optocouplers PDIP6 8.51x6.35, 2.54P CASE 646BX H11F1M, H11F2M, H11F3M 6 1 General Description The H11FXM series consists of a GalliumAluminumArsenide PDIP6 8.51x6.35, 2.54P IRED emitting diode coupled to a symmetrical bilateral silicon 6 CASE 646BY photodetector. The detector is electrically isolated from the input 1 and performs like an ideal isolated FET designed for distortionfree control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual inline packages. PDIP6 8.51x6.35, 2.54P CASE 646BZ Features 6 As a Remote Variable Resistor: 1 100 to 300 M 15 pF Shunt Capacitance MARKING DIAGRAM 100 G I/O Isolation Resistance As an Analog Switch: Extremely Low Offset Voltage ON 60 V Signal Capability pk pk H11F1 No Charge Injection or LatchUp VXYYQ UL Recognized (File E90700) These are PbFree Devices Application H11F1 = Specific Device Code As a Remote Variable Resistor: V = VDE Mark (Only appears on parts ordered with VDE option See order entry table) Isolated Variable Attenuator X = OneDigit Year Code, e.g., 7 Automatic Gain Control YY = Two Digit Work Week Ranging Active Filter Fine Tuning/Band Switching from 01 to 53 As an Analog Switch: Q = Assembly Package Code Isolated Sample and Hold Circuit Multiplexed, Optically Isolated A/D Conversion SCHEMATIC OUTPUT ANODE 1 6 TERM. CATHODE 5 2 OUTPUT 4 3 TERM. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: September, 2021 Rev. 2 H11F3M/DH11F1M, H11F2M, H11F3M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1 < 150 Vrms IIV < 300 Vrms IIV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V Input to Output Test Voltage, Method A, V x 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m Input to Output Test Voltage, Method B, V x 1.875 = V , 1594 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable Over Voltage 6,000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at Ts, V = 500 V (Note 1) >10 IO IO 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise specified) A Symbol Parameter Value Unit TOTAL DEVICE T Storage Temperature 40 to +150 C STG T Operating Temperature 40 to +100 C OPR T Lead Solder Temperature 260 for 10 seconds C SOL EMITTER I Continuous Forward Current 60 mA F V Reverse Voltage 5 V R I (pk) Forward Current Peak (10 s Pulse, 1% Duty Cycle) 1 A F P LED Power Dissipation Ambient 25C Ambient 100 mW D Derate Linearly from 25C 1.33 mW/C DETECTOR P Detector Power Dissipation at 25C 300 mW D Derate Linearly from 25C 4.0 mW/C BV Breakdown Voltage (Either Polarity) H11F1M, H11F2M 30 V 4 6 H11F3M 15 V I Continuous Detector Current (Either Polarity) 100 mA 4 6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2