6-Pin DIP High Voltage Photodarlington Optocouplers H11G1M, H11G2M Description www.onsemi.com The H11G1M and H11G2M are photodarlingtontype optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected PDIP6 8.51x6.35, 2.54P phototransistor which has an integral baseemitter resistor to optimize 6 CASE 646BY elevated temperature characteristics. 1 Features High BV : CEO PDIP6 8.51x6.35, 2.54P 100 V Minimum for H11G1M CASE 646BX 6 80 V Minimum for H11G2M 1 High Sensitivity to Low Input Current (Minimum 500% CTR at I = 1 mA) F Low Leakage Current at Elevated Temperature PDIP6 8.51x6.35, 2.54P CASE 646BZ 6 (Maximum 100 A at 80C) 1 Safety and Regulatory Approvals: UL1577, 4,170 VAC for 1 Minute RMS DINEN/IEC6074755, 850 V Peak Working Insulation Voltage MARKING DIAGRAM Application ON CMOS Logic Interface H11G1 Telephone Ring Detector VXYYQ Low Input TTL Interface Power Supply Isolation H11G1 = Specific Device Code Replace Pulse Transformer V = DIN EN/IEC6074755 Option (only appears on component ordered with this option) X = OneDigit Year Code YY = Digit Work Week Q = Assembly Package Code SCHEMATIC 6 ANODE 1 BASE CATHODE 2 5 COLLECTOR 3 4 N/C EMITTER ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: July, 2020 Rev. 2 H11G1M/DH11G1M, H11G2M SAFETY AND INSULATION RATINGS (As per DIN EN/IEC 6074755, this optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.) Parameter Characteristics Installation Classifications per DIN VDE 0110/1.89 Table 1, <150 V IIV RMS For Rated Mains Voltage <300 V IIV RMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175 Symbol Parameter Value Unit V InputtoOutput Test Voltage, Method A, V x 1.6 = V , 1360 V PR IORM PR peak Type and Sample Test with t = 10 s, Partial Discharge < 5 pC m InputtoOutput Test Voltage, Method B, V x 1.875 = V , 1594 V IORM PR peak 100% Production Test with t = 1 s, Partial Discharge < 5 pC m V Maximum Working Insulation Voltage 850 V IORM peak V Highest Allowable OverVoltage 6000 V IOTM peak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4 Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm T Case Temperature (Note 1) 175 C S I Input Current (Note 1) 350 mA S,INPUT P Output Power (Note 1) 800 mW S,OUTPUT 9 R Insulation Resistance at T , V = 500 V (Note 1) IO S IO >10 1. Safety limit values maximum values allowed in the event of a failure. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Max Unit TOTAL DEVICE T Storage Temperature 40 to +125 C STG T Operating Temperature 40 to +100 C OPR T Junction Temperature 40 to +125 C J T Lead Solder Temperature 260 for 10 seconds C SOL P Total Device Power Dissipation T = 25C 290 mW D A Derate Above 25C 3.5 mW/C EMITTER I DC / Average Forward Input Current 60 mA F V Reverse Input Voltage 6.0 V R I (pk) 3.0 A Forward Current Peak (1 s pulse, 300 pps) F P LED Power Dissipation T = 25C 90 mW D A Derate Above 25C 1.8 mW/C DETECTOR V Collector Emitter Voltage H11G1M 100 V CEO H11G2M 80 V P Photodetector Power Dissipation T = 25C 200 mW D A Derate Above 25C 2.67 mW/C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2
