2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
MILPRF 19500/391 Qualified 2N3019, 2N3019S, 2N3700
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V Vdc
(BR)CEO
(I = 30 mAdc) 80
C
EmitterBase Cutoff Current I
EBO
(V = 5.0 Vdc) 10 nAdc
EB
(V = 7.0 Vdc) 10 Adc
EB
CollectorEmitter Cutoff Current I
CEO
(V = 90 Vdc) 10 nAdc
CE
CollectorBase Cutoff Current I
CBO
(V = 140 Vdc) 10 Adc
CB
ON CHARACTERISTICS (Note 1)
DC Current Gain h
FE
(I = 0.1 mAdc, V = 10 Vdc) 50 300
C CE
(I = 10 mAdc, V = 10 Vdc) 90
C CE
(I = 150 mAdc, V = 10 Vdc) 100 300
C CE
(I = 500 mAdc, V = 10 Vdc) 50 300
C CE
(I = 1.0 Adc, V = 10 Vdc) 15
C CE
Collector Emitter Saturation Voltage V Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc) 0.2
C B
(I = 500 mAdc, I = 50 mAdc) 0.5
C B
Base Emitter Saturation Voltage V Vdc
BE(sat)
(I = 150 mAdc, I = 15 mAdc) 1.1
C B
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain |h |
fe
(I = 50 mAdc, V = 10 Vdc, f = 20 MHz) 5.0 20
C CE
SmallSignal Current Gain h
fe
(I = 1.0 mAdc, V = 5 Vdc, f = 1 kHz) 80 400
C CE
Output Capacitance C pF
obo
(V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz) 12
CB E
Input Capacitance C pF
ibo
(V = 0.5 Vdc, I = 0, 100 kHz f 1.0 MHz) 60
EB C
Noise Figure NF dB
(V = 10 Vdc, I = 100 Adc, R = 1 k, PBW = 200 Hz) 4.0
CE C g
CollectorBase Time Constant r ,C ps
b C
(V = 10 Vdc, I = 10 mAdc, f = 79.8 MHz) 400
CB C
SWITCHING CHARACTERISTICS
Pulse Response t + t ns
on off
(Reference Figure in MILPRF19500/391) 30
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.