ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. KAF-16200 4500 (H) x 3600 (V) Full Frame CCD Image Sensor Description The KAF16200 is a single output, high performance CCD (charge coupled device) image sensor with 4500 (H) x 3600 (V) photoactive www.onsemi.com pixels designed for a wide range of color or monochrome image sensing applications. Each pixel contains antiblooming protection by means of a lateral overflow drain thereby preventing image corruption during high light level conditions. Each of the 6.0 m square pixels of the color version are selectively covered with red, green or blue pigmented filters for color separation. Microlenses are added for improved sensitivity on both color and monochrome sensors. The sensor utilizes a transparent gate electrode to improve sensitivity compared to the use of a standard front side illuminated polysilicon electrode. Table 1. GENERAL SPECIFICATIONS Parameter Typical Value Figure 1. KAF16200 CCD Image Sensor Architecture Full Frame CCD with Square Pixels Total Number of Pixels 4641 (H) x 3695 (V) = 17.0 M Features Number of Effective Pixels 4540 (H) x 3640 (V) = 16.5 M Transparent Gate Electrode for High Number of Active Pixels 4500 (H) x 3600 (V) = 16.2 M Sensitivity Pixel Size 6.0 m (H) x 6.0 m (V) High Resolution, 35 mm Diagonal Format Active Image Size 27.0 mm (H) x 21.6 mm (V) Broad Dynamic Range 34.6 mm Diag., APSH Optical Format Low Noise Aspect Ratio 5:4 Large Image Area Output Sensitivity (Q/V) 31 V/e Charge Capacity (24 MHz) 41 ke Applications Read Noise (f = 24 MHz) 14 e rms Astrophotography Dark Current (60C) 112 e /s Scientific Imaging Dynamic Range 69 dB linear Quantum Efficiency (Peak) Color (600, 549, 480 nm) 33%, 40%, 33% ORDERING INFORMATION Monochrome (540 nm) 56% See detailed ordering and shipping information on page 2 of Maximum Frame Rate 1.23 fps this data sheet. Maximum Data Rate 24 MHz Blooming Protection 2000 X Saturation Exposure NOTE: Unless noted, all parameters are specified at 25C. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2017 Rev. 2 KAF16200/D