KSA1156 KSA1156 High Voltage Switching Low Power Switching Regulator DC-DC Converter High Breakdown Voltage Low Collector Saturation Voltage High Speed Switching TO-126 1 1. Emitter 2.Collector 3.Base PNP Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage - 400 V CBO V Collector-Emitter Voltage - 400 V CEO V Emitter-Base Voltage - 7 V EBO I Base Current - 0.25 A B I Collector Current (DC) - 0.5 A C I Collector Current (Pulse) - 1 A CP P Collector Dissipation (T =25C) 1 W C a P Collector Dissipation (T =25C) 10 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = - 100mA, I = - 10mA - 400 V CEO C B L = - 20mH V (sus) Collector-Emitter Sustaining Voltage I = - 200mA, I = - I = - 20mA - 400 V CEX C B1 B2 V (off)= 5V, L = 10mH BE I Collector Cut-off Current V = - 400V, I = 0 - 100 A CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 10 A EBO EB C I Collector Cut-off Current V = - 400V, V (off) = 1.5V - 100 A CEX1 CE BE - 1 mA I Collector Cut-off Current V = - 400V, V (off) = 1.5V CEX2 CE BE T = 125C C h DC Current Gain V = - 5V, I = - 100mA 30 200 FE CE C V (sat) Collector-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1 V CE C B V (sat) Base-Emitter Saturation Voltage I = - 100mA, I = - 10mA - 1.2 V BE C B t Turn On Time V = - 150V, I = - 100mA 1 s ON CC C I = - 10mA , I = 20mA t Storage Time B1 B2 4 s STG R = 1.5K L t Fall Time 1 s F h Classification FE Classification N R O Y h 30 ~ 60 40 ~ 80 60 ~ 120 100 ~ 200 FE 2000 Fairchild Semiconductor International Rev. A, February 2000KSA1156 S/b LIMITED Dissipation Limited 10 100 1ms DC DISSIPATION LIMITED S/b Limited Typical Characteristics -0.5 1000 IB = -200mA VCE = -5V Pulse Test I = -180mA -0.4 B I = -160mA B IB = -140mA 100 -0.3 IB = -120mA I = -100mA B -0.2 I = -80mA B 10 I = -60mA B I = -40mA -0.1 B IB = -20mA -0.0 1 -0 -2 -4 -6 -8 -10 -0.1 -1 -10 -100 -1000 V V , COLLECTOR-EMITTER VOLTAGE CE I A , COLLECTOR CURRENT C Figure 1. Static Characteristic Figure 2. DC current Gain -10 -10 I = 10 I C B IC MAX. (Pulse) -1 V (sat) -1 BE -0.1 -0.1 VCE(sat) -0.01 -1E-3 -0.01 -0.1 -1 -10 -100 -1000 -1 -10 -100 -1000 VCE V , COLLECTOR-EMITTER VOLTAGE IC mA , COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area Base-Emitter Saturation Voltage -250 160 140 -200 120 100 -150 80 -100 60 40 -50 20 -0 0 -0 -100 -200 -300 -400 -500 0 50 100 150 200 o V (v), COLLECTOR EMITTER VOLTAGE CE TC C , CASE TEMPERATURE Figure 5. Reverse Bias Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas 2000 Fairchild Semiconductor International Rev. A, February 2000 V (sat), V (sat) V , SATURATION VOLTAGE IC(mA), COLLECTOR CURRENT BE CE I A , COLLECTOR CURRENT C dT(%),I DERATING c I A , COLLECTOR CURRENT C hFE, DC CURRENT GAIN VCEOMAX.