KSA1220/1220A KSA1220/1220A Audio Frequency Power Amplifier High Frequency Power Amplifier Complement to KSC2690/KSC2690A TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage : KSA1220 - 120 V CBO : KSA1220A - 160 V V Collector-Emitter Voltage : KSA1220 - 120 V CEO : KSA1220A - 160 V V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 1.2 A C I *Collector Current (Pulse) - 2.5 A CP I Base Current - 0.3 A B P Collector Dissipation (T =25C) 1.2 W C a P Collector Dissipation (T =25C) 20 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG * PW10ms, Duty Cycle50% Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = - 120V, I = 0 - 1 A CBO CB E I Emitter Cut-off Current V = - 3V, I = 0 - 1 A EBO EB C h * DC Current Gain V = - 5V, I = - 5mA 35 150 FE1 CE C h V = - 5V, I = - 0.3A 60 140 320 FE2 CE C V (sat) * Collector-Emitter Saturation Voltage I = - 1A, I = - 0.2A - 0.4 - 0.7 V CE C B V (sat) * Base-Emitter Saturation Voltage I = - 1A, I = - 0.2A - 1 - 1.3 V BE C B f Current Gain Bandwidth Product V = - 5V, I = - 0.2A 175 MHz T CE C C Output Capacitance V = - 10, I = 0 26 pF ob CB E f = 1MHz * Pulse Test: PW350 s, Duty Cycle2% Pulsed h Classification FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE2 2001 Fairchild Semiconductor Corporation Rev. A1, June 2001KSA1220/1220A PW=100 1ms 10ms DC(PW=50ms) S/b Limited Typical Characteristics -1.0 1000 IB = -7mA IB = -6mA IB = -5mA VCE = -5V -0.8 Pulse Test IB = -4mA 100 -0.6 IB = -3mA -0.4 I = -2mA B 10 IB = -1mA -0.2 IB = 0A -0.0 1 -0 -10 -20 -30 -40 -50 -60 -1E-3 -0.01 -0.1 -1 -10 V V , COLLECTOR-EMITTER VOLTAGE CE I A , COLLECTOR CURRENT C Figure 1. Static Characteristic Figure 2. DC current Gain 1000 -10 f=1.0MHz IC = 5 IB I =0 E Pulse Test 100 -1 VBE(sat) 10 -0.1 VCE(sat) -0.01 1 -1E-3 -0.01 -0.1 -1 -10 -1 -10 -100 -1000 V V , COLLECTOR-BASE VOLTAGE IC A , COLLECTOR CURRENT CB Figure 3. Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance Collector-Emitter Saturation Voltage 1000 -10 V = -5V CE I MAX. (Pulse) C Pulse Test I MAX. (DC) C 100 -1 Dissipation Limited 10 -0.1 KSA1220 KSA1220A 1 -0.01 -0.01 -0.1 -1 -1 -10 -100 -1000 I A , COLLECTOR CURRENT VCE V , COLLECTOR-EMITTER VOLTAGE C Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area 2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 IB = -9mA IB = -8mA I = -10mA B V (sat), V (sat) V , SATURATION VOLTAGE BE CE fTMHz), CURRENT GAIN BANDWIDTH PRODUCT I A , COLLECTOR CURRENT C C (PF), CAPACITANCE IC A , COLLECTOR CURRENT ob hFE, DC CURRENT GAIN