PNP Epitaxial Silicon Transistor KSA928A Features Audio Power Amplifier www.onsemi.com Complement to KSC2328A 3 W Output Application ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) (Notes 1, 2) A Symbol Parameter Value Unit V CollectorBase Voltage 30 V CBO TO92 3 LF CASE 135AM V CollectorEmitter Voltage 30 V CEO V EmitterBase Voltage 5 V EBO MARKING DIAGRAM I Collector Current 2 A C T Junction Temperature 150 C J T Storage Temperature 55 to +150 C STG AA9 Stresses exceeding those listed in the Maximum Ratings table may damage the 28AX device. If any of these limits are exceeded, device functionality should not be YWW assumed, damage may occur and reliability may be affected. 1: Emitter 1. These ratings are based on a maximum junction temperature of 150C. 2: Collector 2. These are steady state limits. ON Semiconductor should be consulted on 3: Base applications involving pulsed or lowdutycycle operations. THERMAL CHARACTERISTICS 12 3 (Values are at T = 25C unless otherwise noted.) (Note 3) A A = Assembly Code Symbol Parameter Value Unit A928A = Device Code P Power Dissipation 1000 mW D X = O / Y YWW = Date Code Derate Above 25 C 8.0 mW/C R Thermal Resistance, 125 C/W JA JunctiontoAmbient ORDERING INFORMATION 3. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. Device Package Shipping KSA928AOTA TO92 3 LF 2000 / (PbFree) FanFold KSA928AYTA TO92 3 LF 2000 / (PbFree) FanFold Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2021 Rev. 2 KSA928A/DKSA928A ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min. Typ. Max. Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 30 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 30 V CEO C B BV EmitterBase Breakdown Voltage I = 1 mA, I = 0 5 V EBO E C I Collector CutOff Current V = 30 V, I = 0 100 nA CBO CB E I Emitter CutOff Current V = 5 V, I = 0 100 nA EBO EB C h DC Current Gain V = 2 V, I = 500 mA 100 320 FE CE C V (on) BaseEmitter On Voltage V = 2 V, I = 500 mA 1.0 V BE CE C V (sat) CollectorEmitter Saturation Voltage I = 1.5 A, I = 30 mA 2.0 V CE C B f Current Gain Bandwidth Product V = 2 V, I = 500 mA 120 MHz T CE C C Collector Output Capacitance V = 10 V, I = 0, f = 1 MHz 48 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification O Y h 100 ~ 200 160 ~ 320 FE www.onsemi.com 2