KSB1366 KSB1366 LOW FREQUENCY POWER AMPLIFIER Complement to KSD2012 TO-220F 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage - 60 V CBO V Collector-Emitter Voltage - 60 V CEO V Emitter-Base Voltage - 7 V EBO I Collector Current(DC) - 3 A C I Base Current - 0.5 A B P Collector Dissipation (T =25C) 2 W C a P Collector Dissipation (T =25C) 25 W C C T Junction Temperature 150 C J T Storage Temperature - 55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = - 50mA, I = 0 - 60 V CEO C B I Collector Cut-off Current V = - 60V, I = 0 - 100 A CBO CB E I Emitter Cut-off Current V = - 7V, I = 0 - 100 A EBO EB C h DC Current Gain V = - 5V, I = - 0.5A 100 320 FE1 CE C h V = - 5V, I = - 3A 20 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = - 2A, I = - 0.2A - 0.5 - 1 V CE C B V (on) Base-Emitter ON Voltage V = - 5V, I = - 0.5A - 0.7 - 1 V BE CE C f Current Gain Bandwidth Product V = - 5V, I = - 0.5A 9 MHz T CE C h Classification FE Classification Y G h 100 ~ 200 150 ~ 320 FE1 2000 Fairchild Semiconductor International Rev. A, February 2000KSB1366 1mS 1S 10ms 100mS DC Typical Characteristics -5 1000 V = -5V CE -4 100 -3 I = -40mA B I = -30mA B -2 I = -20mA B 10 I = -10mA B -1 IB = 0 -0 1 -0.01 -0.1 -1 -10 -0 -1 -2 -3 -4 -5 I A , COLLECTOR CURRENT V V , COLLECTOR-EMITTER VOLTAGE C CE Figure 1. Static Characteristic Figure 2. DC current Gain -4 V = -5V CE -10 I = 10 I C B -3 -1 -2 -0.1 -1 -0 -0.0 -0.4 -0.8 -1.2 -1.6 -0.01 -0.01 -0.1 -1 -10 VBE V , BASE-EMITTER VOLTAGE I A , COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -10 40 ICmax(pulse) 35 I max(DC) C 30 25 -1 20 15 10 5 -0.1 0 -1 -10 -100 0 25 50 75 100 125 150 175 200 V V , COLLECTOR-EMITTER VOLTAGE o CE TC C , CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating 2000 Fairchild Semiconductor International Rev. A, February 2000 I = -50mA B I = -60mA B I = -70mA B IB = -80mA IC A , COLLECTOR CURRENT I A , COLLECTOR CURRENT C V (sat) V , SATURATION VOLTAGE CE V MAX CEO PD W , POWER DISSIPATION IC A , COLLECTOR CURRENT hFE, DC CURRENT GAIN