NPN Epitaxial Silicon Transistor KSD1616A Features Audio Frequency Power Amplifier and Medium Speed Switching www.onsemi.com Complement to KSB1116/KSB1116A These are PbFree Devices ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Value Unit V CollectorBase Voltage 120 V CBO 1. Emitter 1 V CollectorEmitter Voltage 60 V CEO 1 2. Collector 2 2 V EmitterBase Voltage 6 V EBO 3. Base 3 3 I Collector Current (DC) 1 A C TO923 LF TO923 I Collector Current (Pulse) (Note 1) 2 A CASE 135AR CASE 135AN CP T Junction Temperature 150 C J MARKING DIAGRAM T Storage Temperature 55 to 150 C STG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AD1 1. Pulse width 10 ms, duty cycle < 50%. 616Ax YWW THERMAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Max Unit P Total Device Dissipation 0.75 W D A = Assembly Location D1616Ax = Specific Device Code 6 mW/C Derate Above 25 C x = G or Y R Thermal Resistance, 160 C/W Y = Year of Production JA JunctiontoAmbient WW = Work Week Number 2. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. ORDERING INFORMATION Device Package Shipping KSD1616AGBU TO923 10,000 Units / (PbFree) Bulk Bag KSD1616AGTA TO923 LF 2,000 Units / (PbFree) FanFold KSD1616AYTA TO923 LF 2,000 Units / (PbFree) FanFold Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: July, 2021 Rev. 2 KSD1616A/DKSD1616A ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 120 V CBO C E BV CollectorEmitter Breakdown I = 1 mA, I = 0 60 V CEO C B Voltage BV EmitterBase Breakdown Voltage I = 100 A, I = 0 6 V EBO E C I Collector CutOff Current V = 60 V, I = 0 100 nA CBO CB E I Emitter CutOff Current V = 6 V, I = 0 100 nA EBO EB C h DC Current Gain V = 2 V, I = 100 mA 135 400 FE1 CE C h DC Current Gain V = 2 V, I = 1 A 81 FE2 CE C V BaseEmitter On Voltage (Note 3) V = 2 V, I = 50 mA 600 640 700 mV BE(on) CE C V CollectorEmitter Saturation I = 1 A, I = 50 mA 0.15 0.30 V CE(sat) C B Voltage (Note 3) V BaseEmitter Saturation Voltage I = 1 A, I = 50 mA 0.9 1.2 V BE(sat) C B (Note 3) C Output Capacitance V = 10 V, I = 0, f = 1 MHz 19 pF ob CE E f Current Gain Bandwidth Product V = 2 V, I = 100 mA 100 160 MHz T CE C t TurnOn Time V = 10 V, I = 100 mA, 0.07 s ON CC C I = I = 10 mA, B1 B2 t Storage Time 0.95 s STG V = 2 V ~ 3 V BE(off) t Fall Time 0.07 s F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse test: pulse width < 350 s, duty cycle 2% pulsed. h CLASSIFICATION FE Classification Y G hFE1 135 ~ 270 200 ~ 400 www.onsemi.com 2