KSP8098/8099 KSP8098/8099 Amplifier Transistor Collector-Emitter Voltage: V = KSP8098: 60V CEO KSP8099: 80V Collector Power Dissipation: P (max)=625mW C Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KSP8098 60 V : KSP8099 80 V V Collector-Emitter Voltage CEO : KSP8098 60 V : KSP8099 80 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 C J T Storage Temperature -55 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100 A, I =0 CBO C E : KSP8098 60 V : KSP8099 80 V BV * Collector-Emitter Breakdown Voltage I =10mA, I =0 CEO C B : KSP8098 60 V : KSP8099 80 V BV Emitter-Base Breakdown Voltage I =10 A, I =0 6 V EBO E C I Collector Cut-off Current CBO : KSP8098 V =60V, I =0 100 nA CB E : KSP8099 V =80V, I =0 100 nA CB E I Collector Cut-off Current V =60V, I =0 100 nA CEO CE B I Emitter Cut-off Current V =6V, I =0 100 nA EBO EB C h DC Current Gain V =5V, I =1mA 100 300 FE CE C V =5V, I =10mA 100 CE C V =5V, I =100mA 75 CE C V (sat) Collector-Emitter Saturation Voltage I =100mA, I =5mA 0.4 V CE C B I =100mA, I =10mA 0.3 V C B V (on) * Base-Emitter On Voltage BE : KSP8098 V =5V, I =1mA 0.5 0.7 V CE C : KSP8099 V =5V, I =10mA 0.6 0.8 V CE C f Current Gain Bandwidth Product V =5V, I =10mA 150 MHz T CE C f=100MHz C Output Capacitance V =5V, I =0 6pF ob CB E f=1MHz * Pulse Test: Pulse Width300 s, Duty Cycle2% 2001 Fairchild Semiconductor Corporation Rev. A1, July 2001KSP8098/8099 Typical Characteristics 1000 10 I = 10 I C B VCE = 5V VBE(sat) 1 100 0.1 VCE(sat) 10 0.01 0.1 1 10 100 1 10 100 1000 I mA , COLLECTOR CURRENT I mA , COLLECTOR CURRENT C C Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 10 1000 IE = 0 V = 5V f = 1MHz CE 100 1 10 0.1 1 10 100 1 10 100 1000 V V , COLLECTOR-BASE VOLTAGE IC mA , COLLECTOR CURRENT CB Figure 3. Output Capacitance Figure 4. Current Gain Bandwidth Product 2001 Fairchild Semiconductor Corporation Rev. A1, July 2001 Cob pF , CAPACITANCE hFE, DC CURRENT GAIN f MHz , T VBE(sat), VCE(sat) V , SATURATION VOLTAGE CURRENT GAIN BANDWIDTH PRODUCT