KST92 PNP Epitaxial Silicon Transistor July 2014 KST92 PNP Epitaxial Silicon Transistor Features High-Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST92MTF 2D SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBO V Collector-Emitter Voltage -300 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current - Continuous -500 mA C T T Junction and Storage Temperature Range -55 to +150 C J , STG Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Max. Unit P Collector Power Dissipation 350 mW C R Thermal Resistance, Junction to Ambient 357 C/W JA 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com KST92 Rev. 1.1.0 KST92 PNP Epitaxial Silicon Transistor Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit V Collector-Base Breakdown Voltage I = -100 A, I = 0 -300 V CBO C E (1) V Collector-Emitter Breakdown Voltage I = -1 mA, I = 0 -300 V CEO C B V Emitter-Base Breakdown Voltage I = -100 A, I = 0 -5 V EBO E C I Collector Cut-Off Current V = -200 V, I = 0 -0.25 A CBO CB E I Emitter Cut-Off Current V = -5 V, I = 0 -0.1 A EBO EB C V = -10 V, I = -1 mA 25 CE C (1) h DC Current Gain V = -10 V, I = -10 mA 40 FE CE C V = -10 V, I = -30 mA 25 CE C (1) V (sat) Collector-Emitter Saturation Voltage I = -20 mA, I = -2 mA -0.5 V CE C B (1) V (sat) Base-Emitter Saturation Voltage I = -20 mA, I = -2 mA -0.9 V BE C B V = -20 V, I = 0, CB E C Output Capacitance 6pF ob f = 1 MHz = -20 V, I = -10 mA, V CE C f Current Gain Bandwidth Product 50 MHz T f = 100 MHz Note: 1. Pulse test: pulse width 300 s, duty cycle 2%. 2003 Fairchild Semiconductor Corporation www.fairchildsemi.com KST92 Rev. 1.1.0 2