LB1930MCGEVB ON Semiconductor

Ordering number : ENA2018A LB1930MC Monolithic Digital IC Low-Voltage, Low-Saturation LB1930MC Allowable Operating Ranges at Ta = 25C Parameter Symbol Conditions Ratings Unit Supply voltage V 2.2 to 10.8 V CC High-level input voltage V 2.0 to 10 V IH Low-level input voltage V -0.3 to +0.3 V IL Electrical Characteristics at Ta = 25C, V = 3V CC Ratings Parameter Symbol Conditions Unit min typ max Current drain I1 Standby mode 0.1 5 A CC I 2 Forward or reverse drive operation 15 21 mA CC I3 Braking 22 31 mA CC Output saturation voltage V (sat)1 Forward or reverse drive: High side + low side, 0.25 0.35 V O I = 200mA O V (sat)2 Forward or reverse drive: High side + low side, 0.55 0.75 V O I = 500mA O V (sat)3 Forward or reverse drive: High side only, 0.15 0.25 V O I = 200mA O Input current I V = 5V 70 95 A IN IN Thermal detection operating THD Design guarantee value* 150 180 200 C temperature Spark Killer diode Forward voltage V I = 200mA 0.9 1.7 V SF O Reverse current I V = 10V 0.1 5 A RS OUT * Design guarantee value, Do not measurement. Package Dimensions unit : mm (typ) 3426A 4.9 Pd max -- Ta 1000 10 6 3 Spesified board: 114.376.11.6mm glass epoxy board. 800 750 600 1 5 400 1.0 0.41 0.21 390 0 -30-20 0 2040608085 100 Ambient temperature, Ta -- C SANYO : SOIC10 No.A2018-2/5 200 0.175 1.5 3.9 1.75 MAX 6.0 0.37 0.835 Allowable power dissipation, Pd max -- mW