LE25S40AFDTWG ON Semiconductor

Ordering number : EN*A2312 LE25S40AFD Advance Information LE25S40AFD Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings unit Maximum supply voltage With respect to V 0.5 to +2.4 V SS DC voltage (all pins) With respect to V 0.5 to V +0.5 V SS DD Storage temperature Tstg 55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage 1.65 to 1.95 V Operating ambient temperature 40 to +90 C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Allowable DC Operating Conditions Ratings Parameter Symbol Conditions unit min typ max SCK = 0.1V /0.9V , 30MHz 6mA DD DD Single HOLD = WP = 0.9V , DD 40MHz 8mA Read mode operating current I CCR SO = open Dual 40MHz 10 mA Write mode operating current I t = t = t = typ., t = max CCW SSE SE CHE PP 15mA (erase+page program) CS HOLD WP CMOS standby current I = V , = = V , SB DD DD 50 A SI = V /V , SO = open SS DD Power-down standby current I CS = V , HOLD = WP = V , DSB DD DD 10 A SI = V /V , SO = open SS DD Input leakage current I 2 A LI Output leakage current I 2 A LO Input low voltage V 0.3 0.3V V IL DD Input high voltage V 0.7V V +0.3 V IH DD DD Output low voltage V I = 100A, V = V min 0.2 OL OL DD DD V I = 1.6mA, V = V min 0.4 OL DD DD Output high voltage V I = 100A, V = V min V 0.2 V OH OH DD DD CC Data hold, Rewriting frequency Parameter Conditions min max unit Program/Erase 100,000 times/ Rewriting frequency Sector Status resister write 1,000 Data hold 20 year Pin Capacitance at Ta = 25C, f = 1MHz Ratings Parameter Symbol Conditions unit max Output pin capacitance C V = 0V 12 pF SO SO Input pin capacitance C V = 0V 6 pF IN IN Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2312-2/23