X-On Electronics has gained recognition as a prominent supplier of LE25S81FDTWG NOR Flash across the USA, India, Europe, Australia, and various other global locations. LE25S81FDTWG NOR Flash are a product manufactured by ON Semiconductor. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

LE25S81FDTWG ON Semiconductor

LE25S81FDTWG electronic component of ON Semiconductor
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See Product Specifications
Part No. LE25S81FDTWG
Manufacturer: ON Semiconductor
Category: NOR Flash
Description: NOR Flash 8M BIT SERIAL FLASH MEMORY
Datasheet: LE25S81FDTWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.9178 ea
Line Total: USD 2753.4 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.9178

   
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We are delighted to provide the LE25S81FDTWG from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the LE25S81FDTWG and other electronic components in the NOR Flash category and beyond.

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Ordering number : EN*A2262A LE25S81FD Advance Information LE25S81FD Specifications Absolute Maximum Ratings Parameter Symbol Conditions Ratings unit Maximum supply voltage With respect to V -0.5 to +2.4 V SS DC voltage (all pins) With respect to V -0.5 to V +0.5 V SS DD Storage temperature Tstg -55 to +150 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Operating Conditions Parameter Symbol Conditions Ratings unit Operating supply voltage 1.65 to 1.95 V Operating ambient temperature Write operation -40 to +90 C Read operation -40 to +90 Allowable DC Operating Conditions Ratings Parameter Symbol Conditions unit min typ max SCK = 0.1V /0.9V , 33MHz 6mA DD DD Single HOLD = WP = 0.9V , DD 40MHz 8mA Read mode operating current I CCR SO = open Dual *1 40MHz 10 mA Write mode operating current I t = t = t = typ., t = max CCW SSE SE CHE PP 40mA (erase+page program) CMOS standby current I CS = V , HOLD = WP = V , SB DD DD 50 A SI = V /V , SO = open SS DD CS HOLD WP Power-down standby current I = V , = = V , DSB DD DD 15 A SI = V /V , SO = open SS DD Input leakage current I 2 A LI Output leakage current I 2 A LO Input low voltage V -0.3 0.3V V IL DD Input high voltage V 0.7V V +0.3 V IH DD DD Output low voltage V I = 100A, V = V min 0.2 OL OL DD DD V I = 1.6mA, V = V min 0.4 OL DD DD Output high voltage V I = -100A, V = V min V-0.2 V OH OH DD DD CC *1: Dual Read is not supported on LE25S81FD. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Data hold, Rewriting frequency Parameter Conditions min max unit Program/Erase 100,000 times/ Rewriting frequency Sector Status resister write 1,000 Data hold 20 year Pin Capacitance at Ta = 25C, f = 1MHz Ratings Parameter Symbol Conditions unit max Output pin capacitance C V = 0V 12 pF SO SO Input pin Capacitance C V = 0V 6 pF IN IN Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for some of the sampled devices. No.A2262-2/23

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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