LV47009P-E ON Semiconductor

OrdeOrderirinngg numbe number : ENA1959Dr : ENA1959D LV47009P Monolithic Linear IC LV47009P Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings Unit Supply voltage V max1 No signal, t = 1 minute 26 V CC V max2 During operations 18 V CC Output current I peak Per channel 4.5/ch A O Allowable power dissipation Pd max With an infinity heat sink 50 W Operating temperature Topr -40 to +85 C Storage temperature Tstg -40 to +150 C Junction temperature Tj 150 C Thermal resistance between the junction j-c 1 C/W and case Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Recommended Operating Ranges at Ta = 25C Parameter Symbol Conditions Ratings Unit Load resistance R op 4 L Operating supply voltage range V op A range not exceeding Pdmax 8 to 16 V CC Electrical Characteristics at Ta = 25C, V = 14.4V, R = 4 , f = 1kHz, Rg = 600 CC L Ratings Parameter Symbol Conditions Unit min typ max Quiescent current I R = , Rg = 0 200 400 mA CCO L Standby current Ist Vst = 0V 10 A Voltage gain VG V = 0dBm 25 26 27 dB O Voltage gain difference VG -1 +1 dB Output power P THD = 10% 19 24 W O P max1 Max Power 37 W O P max2 V = 15.2, Max Power 41 W O CC Output offset voltage Vn offset Rg = 0 -150 +150mV Total harmonic distortion THD P = 4W 0.03 0.2 % O Channel separation CHsep V = 0dBm, Rg = 10k 55 65 dB O Ripple rejection ratio SVRR Rg = 0, fr = 100Hz, V R = 0dBm 45 65 dB CC Output noise voltage V Rg = 0, B.P.F. = 20Hz to 20kHz 80 200 Vrms NO Input resistance Ri 40 50 65 k Mute attenuation Matt V = 20dBm, mute : on 75 90 dB O Standby pin control voltage Vstby H Amp : on 2.5 V V CC Vstby L Amp : off 0.0 0.5 V Mute pin control voltage Vmute H Mute : off Open - Vmute L Mute : on 0.0 1.0 V * 0dBm = 0.775Vrms No.A1959-2/11