MC74VHCT126A Quad Bus Buffer with 3State Control Inputs The MC74VHCT126A is a high speed CMOS quad bus buffer fabricated with silicon gate CMOS technology. It achieves noninverting high speed operation similar to equivalent Bipolar www.onsemi.com Schottky TTL while maintaining CMOS low power dissipation. The MC74VHCT126A requires the 3state control input (OE) to be MARKING set Low to place the output into high impedance. DIAGRAMS The VHCT inputs are compatible with TTL levels. This device can be used as a level converter for interfacing 3.3 V to 5.0 V, because it 14 has full 5.0 V CMOS level output swings. SOIC14 VHCT126AG D SUFFIX The VHCT126A input structures provide protection when voltages AWLYWW CASE 751A between 0 V and 5.5 V are applied, regardless of the supply voltage. 1 1 The output structures also provide protection when V = 0 V. These CC input and output structures help prevent device destruction caused by 14 supply voltage input/output voltage mismatch, battery backup, hot VHCT insertion, etc. TSSOP14 126A DT SUFFIX The internal circuit is composed of three stages, including a buffer ALYW CASE 948G output which provides high noise immunity and stable output. The 1 1 inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. A = Assembly Location WL, L = Wafer Lot Features Y = Year WW, W = Work Week High Speed: t = 3.8 ns (Typ) at V = 5.0 V PD CC G or = PbFree Package Low Power Dissipation: I = 4.0 A (Max) at T = 25C CC A (Note: Microdot may be in either location) TTLCompatible Inputs: V = 0.8 V V = 2.0 V IL IH See Applications Note AND8004/D for Power Down Protection Provided on Inputs date code and traceability information. Balanced Propagation Delays Designed for 2.0 V to 5.5 V Operating Range FUNCTION TABLE Low Noise: V = 0.8 V (Max) OLP Pin and Function Compatible with Other Standard Logic Families VHCT126A Latchup Performance Exceeds 300 mA Inputs Outputs ESD Performance: HBM > 2000 V Machine Model > 200 V A OE Y Chip Complexity: 72 FETs or 18 Equivalent Gates H H H NLV Prefix for Automotive and Other Applications Requiring L H L Unique Site and Control Change Requirements AECQ100 X L Z Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2016 Rev. 11 MC74VHCT126A/DMC74VHCT126A 2 3 A1 Y1 1 OE1 OE1 1 14 V CC 5 6 A1 2 13 OE4 A2 Y2 4 Y1 3 12 A4 OE2 OE2 4 11 Y4 9 8 Y3 A3 A2 5 10 OE3 10 Y2 6 9 A3 OE3 GND 7 8 Y3 12 11 A4 Y4 13 OE4 Figure 2. PIN ASSIGNMENT Figure 1. LOGIC DIAGRAM ActiveHigh Output Enables MAXIMUM RATINGS Rating Symbol Value Unit This device contains protection circuitry to guard against damage DC Supply Voltage V 0.5 to + 7.0 V CC due to high static voltages or electric DC Input Voltage V 0.5 to + 7.0 V in fields. However, precautions must be taken to avoid applications of any DC Output Voltage Output in 3State V 0.5 to + 7.0 V out High or Low State voltage higher than maximum rated 0.5 to V + 0.5 CC voltages to this highimpedance cir- Input Diode Current I 20 mA IK cuit. For proper operation, V and in Output Diode Current (V < GND V > V ) I 20 mA V should be constrained to the out OUT OUT CC OK range GND (V or V ) V . in out CC DC Output Current, per Pin I 25 mA out Unused inputs must always be DC Supply Current, V and GND Pins I 75 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). CC Power Dissipation in Still Air, SOIC Packages P 500 mW D Unused outputs must be left open. TSSOP Package 450 Storage Temperature T 65 to + 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Packages: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit DC Supply Voltage V 4.5 5.5 V CC DC Input Voltage V 0 5.5 V in DC Output Voltage Output in 3State V 0 5.5 V out High or Low State 0 V CC Operating Temperature T 40 + 85 C A Input Rise and Fall Time V = 5.0 V 0.5 V t , t 0 20 ns/V CC r f Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2