X-On Electronics has gained recognition as a prominent supplier of MA3075WALT1G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. MA3075WALT1G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

MA3075WALT1G ON Semiconductor

MA3075WALT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.MA3075WALT1G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 7.5V ESD Protection
Datasheet: MA3075WALT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1065 ea
Line Total: USD 319.5 
Availability - 8730
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
8730
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1065
6000 : USD 0.1007
12000 : USD 0.1005
18000 : USD 0.0977
30000 : USD 0.0942

14814
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2243
50 : USD 0.1777
150 : USD 0.1519
500 : USD 0.1362
3000 : USD 0.1227
6000 : USD 0.1154

2803
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.396
10 : USD 0.2695
100 : USD 0.1782
500 : USD 0.1408
1000 : USD 0.1045
3000 : USD 0.1001
9000 : USD 0.0957

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
Taric
Vf - Forward Voltage
Category
Brand Category
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We are delighted to provide the MA3075WALT1G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MA3075WALT1G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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MA3075WALT1G, SZMA3075WALT1G Zener ESD Protection Diode SOT23 Dual Common Anode Zeners for ESD Protection www.onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, 1 3 medical equipment and other applications. Their dual junction common 2 anode design protects two separate lines using only one package. These PIN 1. CATHODE devices are ideal for situations where board space is at a premium. 2. CATHODE 3. ANODE Features SOT23 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1 A 5.0 V 1 Breakdown Voltage: 7.27.9 V 5 mA Low Capacitance (80 pF typical 0 V, 1 MHz) SOT23 ESD Protection Meeting: 16 kV Human Body Model CASE 318 STYLE 12 ESD Protection Meeting: 30 kV Air and Contact Discharge SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and MARKING DIAGRAM PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 7W5 M Mechanical Characteristics: 1 Void Free, TransferMolded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable 7W5 = Specific Device Code Package Designed for Optimal Automated Board Assembly M = Date Code* = PbFree Package Small Package Size for High Density Applications (Note: Microdot may be in either location) MAXIMUM RATINGS *Date Code orientation and/or overbar may vary depending upon manufacturing location. Rating Symbol Value Unit Peak Power Dissipation 100 s (Note 1) P 15 W pk Steady State Power Dissipation P 225 mW D ORDERING INFORMATION Derate above 25C (Note 2) 1.8 mW/C Device Package Shipping Thermal Resistance, JunctiontoAmbient R 556 C/W JA Maximum Junction Temperature R 417 C/W MA3075WALT1G SOT23 3000 / JA (PbFree) Tape & Reel Operating Junction and Storage T , T 55 to +150 C J stg Temperature Range SZMA3075WALT1G SOT23 3000 / ESD Discharge V kV (PbFree) Tape & Reel PP MIL STD 883C Method 30156 16 For information on tape and reel specifications, IEC6100042, Air Discharge 30 including part orientation and tape sizes, please IEC6100042, Contact Discharge 30 refer to our Tape and Reel Packaging Specifications Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive 100 s pulse width 2. Mounted on FR5 Board = 1.0 X 0.75 X 0.062 in. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2017 Rev. 4 MA3075WALT1/DMA3075WALT1G, SZMA3075WALT1G I ELECTRICAL CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Unit I F Forward Voltage V I = 10 mA 0.8 0.9 V F F *2 Zener Voltage V I = 5 mA 7.2 7.5 7.9 V Z Z Operating Resistance R I = 0.5 mA 120 ZK Z V V V C BR RWM R I = 5 mA 6 15 V Z Z I V R F I T Reverse Current I V = 5 V 1 A R1 R I V = 6.5 V 60 A R2 R Temperature Coefficient S I = 5 mA 2.5 4.0 5.3 mV/C Z Z *3 of Zener Voltage I PP Terminal Capacitance C V = 0 V 80 pF t R Product parametric performance is indicated in the Electrical Characteristics for the UniDirectional listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 300 100 t PEAK VALUE I 8 s r RSM 90 250 PULSE WIDTH (t ) IS DEFINED p 80 AS THAT POINT WHERE THE 70 PEAK CURRENT DECAY = 8 s 200 60 HALF VALUE I /2 20 s RSM 150 50 40 100 30 t p 20 50 10 0 0 0 25 50 75 100 125 150 175 020 40 60 80 TEMPERATURE (C) t, TIME ( s) Figure 1. Steady State Power Derating Curve Figure 2. 8 X 20 s Pulse Waveform 1000 100 T = 85C 40C A 10 100 25C 1 10 0.1 1 0.01 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 t , PULSE WIDTH ( s) V , FORWARD VOLTAGE (V) p F Figure 3. Pulse Rating Curve Figure 4. Forward Current versus Forward Voltage www.onsemi.com 2 P , PEAK POWER (W) P , POWER DISSIPATION (mW) PK D % OF PEAK PULSE CURRENT I , FORWARD CURRENT (mA) F

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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