MAC16D, MAC16M, MAC16N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. MAC16D, MAC16M, MAC16N THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.0 C/W JC JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM (V = Rated V , V Gate Open) T = 25C I 0.01 D DRM RRM J RRM T = 125C 2.0 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.2 1.6 V TM (I = 21 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT MT2(+), G(+) 10 16 50 MT2(+), G() 10 18 50 MT2(), G() 10 22 50 Holding Current I 20 50 mA H (V = 12 V, Gate Open, Initiating Current = 150 mA) D Latching Current (V = 24 V, I = 50 mA) I mA D G L MT2(+), G(+) 33 50 MT2(+), G() 36 80 MT2(), G() 33 50 V V Gate Trigger Voltage (V = 12 V, R = 100 ) D L GT MT2(+), G(+) 0.5 0.75 1.5 MT2(+), G() 0.5 0.72 1.5 MT2(), G() 0.5 0.82 1.5 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (di/dt) 9.0 A/ms c (V = 400 V, I = 6.0 A, Commutating dv/dt = 24 V/ s, D TM Gate Open, T = 125C, f = 250 Hz, No Snubber) J C = 10 F L L = 40 mH L Critical Rate of Rise of Off-State Voltage dv/dt 500 V/ s (V = Rated V , Exponential Waveform, D DRM Gate Open, T = 125C) J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.