Thyristors Datasheet MAC210A8, MAC210A10 Triacs 400V - 800V Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies or wherever fullwave silicon gate controlled solidstate devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering. Features Blocking Voltage to 600 Volts Gate Triggering Guaranteed in Four Modes (Quadrants) All Dif fused and Glass Passivated Junctions for PbFree Packages are Greater Parameter Uniformity Available and Stability Small, Rugged, Thermowatt Construction for Low Thermal Additional Information Resistance, High Heat Dissipation and Durability Pin Out Resources Accessories Samples Functional Diagram CASE 221A STYLE 4 MT 2 MT 1 1 G 2 2021 Littelfuse, Inc. 1 Specifications are subject to change without notice. Revised: GD. 05/21/21Thyristors Datasheet MAC210A8, MAC210A10 Triacs 400V - 800V Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) MAC210A8 V , 600 DRM V ( 40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) MAC210A10 V 800 RRM On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T = 70C) I 10 A C T (RMS) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T = c I 100 A TSM +25C) Preceded and followed by rated current 2 Circuit Fusing Consideration (t = 8.3 ms) I t 40 Asec Peak Gate Power P 20 W GM (T = +70C, Pulse Width = 10 s) C Average Gate Power (t = 8.3 ms, T = 70C) P 0.35 W C G (AV) Peak Gate Current (T = +70C, Pulse Width = 10 s) I 2.0 A C GM Operating Junction Temperature Range T -40 to +125 C J Storage Temperature Range T -40 to +150 C stg Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit JunctiontoCase (AC) R 2.0 JC Thermal Resistance, C/W JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes, 1/8 from case for T 260 C L 10 seconds Electrical Characteristics - OFF (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit - - 10 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 125C I D DRM RRM J RRM - - 2.0 mA Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak OnState Voltage (I = 14 A Peak Pulse Width = 1 to 2 ms, Duty Cycle 2%) V 1.2 1.65 V TM TM MT2(+), G(+) 12 50 Gate Trigger Current MT2(+), G() 12 50 (Continuous dc) I mA GT MT2(), G() 20 50 (V = 12 V , R = 100 Ohms) D dc L MT2(), G(+) 35 75 MT2(+), G(+) 0.9 2.0 Gate Trigger Voltage MT2(+), G() 0.9 2.0 (Continuous dc) V V GT MT2(), G() 1.1 2.0 (V = 12 V , R = 100 ) D dc L MT2(), G(+) 1.4 2.5 o Holding Current (V = 12 V , Gate Open, Initiating Current = 200 mA, TC=+25 C)) I 6.0 50 mA D dc H Turn-On Time (Rated V , I = 14 A) DRM TM t 1.5 s gt (I = 120 mA, Rise Time = 0.1 s, Pulse Width = 2 s) GT Gate NonTrigger Voltage (Continuous dc) All Four Quadrants V 0.2 - - v GD (Main Terminal Voltage = 12 V, RL = 100 , T = +125C) J 2021 Littelfuse, Inc. 2 Specifications are subject to change without notice. Revised: GD. 05/21/21