MAC997 Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92 package which is readily adaptable for use in automatic insertion equipment. MAC997 Series (1) V and V for all types can be applied on a continuous basis. Blocking DRM RRM voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R 75 C/W JC Thermal Resistance, Junction to Ambient R 200 C/W JA Maximum Lead Temperature for Soldering Purposes for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , I DRM RRM (V = Rated V , V Gate Open) T = 25C 10 A D DRM RRM J T = +110C 100 A J ON CHARACTERISTICS Peak OnState Voltage V 1.9 Volts TM (I = .85 A Peak Pulse Width 2.0 ms, Duty Cycle 2.0%) TM Gate Trigger Current (Continuous dc) I mA GT (V = 12 Vdc, R = 100 Ohms) D L MT2(+), G(+) MAC997A6,A8 5.0 MT2(+), G() 5.0 MT2(), G() 5.0 MT2(), G(+) 7.0 MT2(+), G(+) MAC997B6,B8 3.0 MT2(+), G() 3.0 MT2(), G() 3.0 MT2(), G(+) 5.0 Latching Current (V = 12 V, I = 10 mA) I mA D G L MT2(+), G(+) All Types 1.6 15 MT2(+), G() All Types 10.5 20 MT2(), G() All Types 1.5 15 MT2(), G(+) All Types 2.5 15 Gate Trigger Voltage (Continuous dc) V Volts GT (V = 12 Vdc, R = 100 Ohms) D L MT2(+), G(+) All Types .66 2.0 MT2(+), G() All Types .77 2.0 MT2(), G() All Types .84 2.0 MT2(), G(+) All Types .88 2.5 Gate NonTrigger Voltage V 0.1 Volts GD (V = 12 V, R = 100 Ohms, T = 110C) D L J All Four Quadrants Holding Current I 1.5 10 mA H (V = 12 Vdc, Initiating Current = 200 mA, Gate Open) D Turn-On Time t 2.0 s gt (V = Rated V , I = 1.0 A pk, I = 25 mA) D DRM TM G DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current di/dt(c) 1.6 A/ms (V = 400 V, I = .84 A, Commutating dv/dt = 1.5 V/s, Gate Open, D TM T = 110C, f = 250 Hz, with Snubber) J Critical Rate of Rise of OffState Voltage dv/dt 20 60 V/s (V = Rated V , Exponential Waveform, Gate Open, T = 110C) D DRM J Repetitive Critical Rate of Rise of OnState Current di/dt 10 A/s Pulse Width = 20 s, IPKmax = 15 A, diG/dt = 1 A/s, f = 60 Hz