MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
3
2 Solder dip 275 C max.10 s, per JESD 22-B106
1
Material categorization: for definitions of compliance
TO-247AD (TO-3P)
please see www.vishay.com/doc?99912
PIN 2
PIN 1
TYPICAL APPLICATIONS
PIN 3
CASE
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: TO-247AD (TO-3P)
I 40 A
F(AV)
Molding compound meets UL 94 V-0 flammability rating
V 35 V, 45 V, 50 V, 60 V
RRM
Base P/N-E3 - RoHS-compliant, commercial grade
I 400 A
FSM
Terminals: Matte tin plated leads, solderable per
V 0.60 V, 0.62 V
F
J-STD-002 and JESD 22-B102
T max. 150 C
J
E3 suffix meets JESD 201 class 1A whisker test
Package TO-247AD (TO-3P)
Polarity: As marked
Diode variations Common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOLMBR4035PTMBR4045PTMBR4050PTMBR4060PTUNIT
Maximum repetitive peak reverse voltage V 35 45 50 60 V
RRM
Maximum working peak reverse voltage V 35 45 50 60 V
RWM
Maximum DC blocking voltage V 35 45 50 60 V
DC
Maximum average forward rectified current T = 125 C I 40 A
C F(AV)
Peak forward surge current 8.3 ms single half
I 400 A
FSM
sine-wave superimposed on rated load per diode
(1)
Peak repetitive reverse surge current per diode I 2.0 1.0 A
RRM
Voltage rate of change (rated V) dV/dt 10 000 V/s
R
Operating junction temperature range T -65 to +150 C
J
Storage temperature range T -65 to +175 C
STG
Note
(1)
2.0 s pulse width, f = 1.0 kHz
Revision: 17-Aug-15 Document Number: 88679
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000MBR4035PT, MBR4045PT, MBR4050PT, MBR4060PT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL TEST CONDITIONS MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
I = 20 A T = 25 C 0.70 0.72
F J
I = 20 A T = 125 C 0.60 0.62
F J
Maximum instantaneous forward
(1)
V V
F
voltage per diode
I = 40 A T = 25 C 0.80 -
F J
I = 40 A T = 125 C 0.75 -
F J
Maximum instantaneous reverse
T = 25 C 1.0
J
(1)
current at rated DC blocking voltage I mA
R
T = 125 C 100
per diode J
Note
(1)
Pulse test: 300 s pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted)
A
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Thermal resistance, junction to case
R 1.2 C/W
JC
per diode
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube
RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted)
A
50 400
T = T Max.
J J
Resistive or Inductive Load
8.3 ms Single Half Sine-Wave
40
300
30
20
200
10
0 100
150 10
0 50 100 1 100
Number of Cycles at 60 Hz
Case Temperature (C)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 17-Aug-15 Document Number: 88679
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Average Forward Current (A)
Peak Forward Surge Current (A)