MBRAF1540T3G, NRVBAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay www.onsemi.com contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. SCHOTTKY BARRIER Features RECTIFIER Low Profile Package for Space Constrained Applications 1.5 AMPERE Rectangular Package for Automated Handling 40 VOLTS Highly Stable Oxide Passivated Junction 150C Operating Junction Temperature GuardRing for Stress Protection NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 SMAFL Qualified and PPAP Capable CASE 403AA These are PbFree and HalideFree Devices STYLE 6 Mechanical Charactersistics Case: Epoxy, Molded, Epoxy Meets UL 94, V0 MARKING DIAGRAM Weight: 95 mg (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal RAE Leads are Readily Solderable AYWW Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds RAE = Specific Device Code Cathode Polarity Band A = Assembly Location Device Meets MSL 1 Requirements Y = Year WW = Work Week ESD Ratings: Machine Model = C = PbFree Package ESD Ratings: Human Body Model = 3B MAXIMUM RATINGS Rating Symbol Value Unit ORDERING INFORMATION Peak Repetitive Reverse Voltage V 40 V RRM Device Package Shipping Working Peak Reverse Voltage V RWM DC Blocking Voltage V R MBRAF1540T3G SMAFL 5000 / Tape & Average Rectified Forward Current I 1.5 A O (PbFree) Reel (At Rated V , T = 100C) R C NRVBAF1540T3G SMAFL 5000 / Tape & Peak Repetitive Forward Current I 3.0 A FRM (PbFree) Reel (At Rated V , Square Wave, R 100 kHz, T = 130C) C For information on tape and reel specifications, including part orientation and tape sizes, please NonRepetitive Peak Surge Current I 40 A FSM refer to our Tape and Reel Packaging Specification (Surge Applied at Rated Load Conditions Brochure, BRD8011/D. Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature T , T 55 to +150 C stg C Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt 10,000 V/ s (Rated V , T = 25C) R J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 3 MBRAF1540/DMBRAF1540T3G, NRVBAF1540T3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, C/W JunctiontoLead (Note 1) R 25 JL Thermal Resistance, JunctiontoAmbient (Note 1) R 90 JA 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit v T = 25C T = 125C V F J J Maximum Instantaneous Forward Voltage (Note 2) 0.46 0.39 (i = 1.5 A) F 0.54 0.54 see Figure 2 (i = 3.0 A) F I T = 25C T = 100C mA R J J Maximum Instantaneous Reverse Current (Note 2) 0.8 5.7 (V = 40 V) R 0.1 1.6 see Figure 4 (V = 20 V) R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2.0%. www.onsemi.com 2