MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G Switch-mode www.onsemi.com Power Rectifier 100 V, 20 A SCHOTTKY BARRIER RECTIFIER Features and Benefits 20 AMPERES, 100 VOLTS Low Forward Voltage: 0.64 V 125C Low Power Loss/High Efficiency 1 High Surge Capacity 2, 4 3 175C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) 4 GuardRing for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant Applications 1 Power Supply Output Rectification 1 2 2 3 3 Power Management TO220 TO220 FULLPAK Instrumentation CASE 221A CASE 221D STYLE 6 STYLE 3 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V0 0.125 in 4 Weight (Approximately): 1 2 1.9 Grams (TO220) 2 3 1.7 Grams (D PAK) Finish: All External Surfaces Corrosion Resistant and Terminal 2 D PAK 3 Leads are Readily Solderable CASE 418B STYLE 3 Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 12 MBR20H100CT/DMBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G AYWW AYWW B20H100G AYWW B20H100G AKA B20H100G AKA AKA 2 TO220 TO220 FULLPAK D PAK 3 A = Assembly Location Y = Year WW = Work Week B20H100 = Device Code G = PbFree Device AKA = Polarity Designator Figure 1. Marking Diagrams MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 100 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V ) T = 162C 10 R C Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz) T = 160C 20 R C Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) 250 Operating Junction Temperature (Note 1) T +175 C J Storage Temperature T 65 to +175 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Controlled Avalanche Energy (see test conditions in Figures 11 and 12) W 200 mJ AVAL ESD Ratings: V > 400 Machine Model = C > 8000 Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R . D J JA THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W (MBR20H100CTG, MBRB20H100CTG and NRVBB20H100CTT4G) JunctiontoCase R 2.0 JC JunctiontoAmbient R 60 JA (MBRF20H100CTG) JunctiontoCase 2.5 R JC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2