Switch-mode Schottky Power Rectifier 250 V, 40 A MBR40250G, MBR40250TG, www.onsemi.com MBRF40250TG, MARKING MBRB40250TG 4 DIAGRAMS Features TO220 (2LEAD) 250 V Blocking Voltage CASE 221B Low Forward Voltage Drop, V = 0.86 V F AYWW Soft Recovery Characteristic, T < 35 ns B40250G RR 3 1, 4 K A Stable Switching Performance Over Temperature 1 These Devices are PbFree and are RoHS Compliant 3 4 Benefits TO220 Reduces or Eliminates Reverse Recovery Oscillations CASE 221A T SUFFIX Minimizes Need for EMI Filtering AYWW Reduces Switching Losses B40250TG 1 A K A Improved Efficiency 2, 4 3 Applications 1 Power Supply 2 3 Power Management Automotive TO220 FULLPACK CASE 221D Instrumentation T SUFFIX AYWW B40250TG Mechanical Characteristics A K A 1 Case: Epoxy, Molded 2 Weight: 1.9 grams (approximately) 3 Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 Leads are Readily Solderable 3 Lead Temperature for Soldering Purposes: 4 AY WW 2 260C Max. for 10 Seconds D PAK 3 CASE 418B Epoxy Meets UL 94 V0 at 0.125 in B40250TG AKA 1 1 4 3 3 B40250 = Device Code T = 3 pins A = Assembly Location Y = Year WW = Work Week G = PbFree Package KA, AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2020 Rev. 15 MBR40250/DMBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 250 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 40 A F(AV) (Rated V ) T = 82C MBR40250, MBR40250T, MBRB40250T R C (Rated V ) T = 46C MBRF40250T R C Peak Repetitive Forward Current I 80 A FRM (Rated V , Square Wave, 20 kHz) T = 82C MBR40250, MBR40250T, MBRB40250T R C (Rated V , Square Wave, 20 kHz) T = 46C MBRF40250T R C Nonrepetitive Peak Surge Current I 150 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Storage Temperature T 65 to +175 C stg Operating Junction Temperature T 65 to +150 C J Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance C/W JunctiontoCase R JC MBR40250(T) and MBRB40250T 2.0 MBRF40250 3.0 JunctiontoAmbient R JA MBR40250(T) 60 MBRF40250 50 MBRB40250T 50 ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 1) V V F I = 20 A, T = 25C 0.86 F C I = 20 A, T = 125C 0.71 F C I = 40 A, T = 25C 0.97 F C I = 40 A, T = 125C 0.86 F C Maximum Instantaneous Reverse Current (Note 1) I mA R Rated DC Voltage, T = 25C 0.25 C Rated DC Voltage, T = 125C 30 C Maximum Reverse Recovery Time t ns rr I = 1.0 A, di/dt = 50 A/ s, T = 25C 35 F C DYNAMIC CHARACTERISTICS Capacitance C pF T V = 5.0 V, T = 25C, Frequency = 1.0 MHz 500 R C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. www.onsemi.com 2