X-On Electronics has gained recognition as a prominent supplier of MBRM120LT3G Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MBRM120LT3G Schottky Diodes & Rectifiers are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MBRM120LT3G ON Semiconductor

MBRM120LT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.MBRM120LT3G
Manufacturer: ON Semiconductor
Category: Schottky Diodes & Rectifiers
Description: ON Semiconductor Schottky Diodes & Rectifiers 1A 20V Low Vf
Datasheet: MBRM120LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1532 ea
Line Total: USD 383 
Availability - 23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
23280
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 1
2500 : USD 0.1532
5000 : USD 0.1509
7500 : USD 0.1486
12000 : USD 0.136
36000 : USD 0.134
60000 : USD 0.132
108000 : USD 0.13
156000 : USD 0.128

500520
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 12000
Multiples : 12000
12000 : USD 0.1361

11414
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4616
10 : USD 0.3507
25 : USD 0.3473
100 : USD 0.26
250 : USD 0.2574
500 : USD 0.2122
1000 : USD 0.1806
3000 : USD 0.1639
6000 : USD 0.1561

21825
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 2500
Multiples : 2500
2500 : USD 0.2071
5000 : USD 0.204
7500 : USD 0.201
12500 : USD 0.1838
37500 : USD 0.1813

   
Manufacturer
Product Category
Package / Case
Packaging
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Diode Case Style
No. Of Pins
Forward Voltage Vf Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Product Range
Svhc
Breakdown Voltage Max
Current Ifsm
Current Ir Max
Diode Type
Forward Voltage
Junction Temperature Tj Max
Operating Temperature Min
Operating Temperature Range
Semiconductor Technology
Termination Type
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We are delighted to provide the MBRM120LT3G from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBRM120LT3G and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G Schottky Power Rectifier, MBRM120LT1G, NRVBM120LT1G, MBRM120LT3G, NRVBM120LT3G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 20 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (At Rated V , T = 135C) 1.0 R C Peak Repetitive Forward Current I A FRM (At Rated V , Square Wave, 100 kHz, T = 135C) 2.0 R C NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to 150 C stg Operating Junction Temperature T 55 to 125 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance, JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance, JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 V T = 25C T = 85C V F J J (I = 0.1 A) 0.34 0.26 F (I = 1.0 A) 0.45 0.415 F (I = 3.0 A) 0.65 0.67 F I mA Maximum Instantaneous Reverse Current (Note 2), See Figure 4 T = 25C T = 85C R J J (V = 20 V) 0.40 25 R (V = 10 V) 0.10 18 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 10 10 T = 125C J T = 85C J T = 125C J 1.0 1.0 T = 85C J T = 25C J T = 40C T = 25C J J 0.1 0.1 0.1 0.3 0.5 0.7 0.9 0.1 0.3 0.5 0.7 0.9 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE F F (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild
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