MBRS320P, MBRS330P, MBRS340P Surface Mount Schottky Power Rectifier These devices employ the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features www.onsemi.com epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or SCHOTTKY BARRIER as free wheeling and polarity protection diodes, in surface mount RECTIFIERS applications where compact size and weight are critical to the system. 3.0 AMPERES 20, 30, 40 VOLTS Features Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop SMC 2LEAD (0.5 V Max 3.0 A, T = 25C) CASE 403AC J Excellent Ability to Withstand Reverse Avalanche Energy Transients MARKING DIAGRAM Guard-Ring for Stress Protection Device Passes ISO 7637 Pulse 1 AYWW These Devices are PbFree, Halogen Free/BFR Free and are RoHS B3x Compliant Mechanical Characteristics B3x = Device Code x = 2, 3 or 4 Case: Epoxy, Molded, Epoxy Meets UL 94 V0 A = Assembly Location* Weight: 217 mg (Approximately) Y = Year Finish: All External Surfaces Corrosion Resistant and Terminal WW = Work Week = PbFree Package Leads are Readily Solderable (Note: Microdot may be in either location) Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is Cathode Polarity Band stamped in the package, the front side assembly Device Meets MSL 1 Requirements code may be blank. ESD Ratings: Machine Model = C (> 400 V) ORDERING INFORMATION Human Body Model = 3B (> 8000 V) Device Package Shipping MBRS320PT3G SMC 2Lead 2,500 / (PbFree) Tape & Reel MBRS330PT3G SMC 2Lead 2,500 / (PbFree) Tape & Reel MBRS340PT3G SMC 2Lead 2,500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2017 Rev. 2 MBRS320P/DMBRS320P, MBRS330P, MBRS340P MAXIMUM RATINGS Rating Symbol MBRS320PT3G MBRS330PT3G MBRS340PT3G Unit Peak Repetitive Reverse Voltage V 20 30 40 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I 3.0 T = 110C A F(AV) L 4.0 T = 105C L Nonrepetitive Peak Surge Current I A FSM (Surge applied at rated load conditions halfwave, 80 single phase, 60 Hz) Operating Junction Temperature T 65 to +150 C J ISO 7637 Pulse 1 Pulses (100 V, 10 ) 5000 ESD Ratings: V Machine Model = C > 400 Human Body Model = 3B > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Thermal Resistance, JunctiontoLead R 11 C/W JL ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) V V F (i = 3.0 A, T = 25C) 0.50 F J Maximum Instantaneous Reverse Current (Note 1) i mA R (Rated dc Voltage, T = 25C) 2.0 J (Rated dc Voltage, T = 100C) 20 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. TYPICAL ELECTRICAL CHARACTERISTICS 10 10 T = 100C T = 100C T = 125C T = 125C J J J J 1 1 T = 25C T = 25C J J T = 40C T = 40C J J T = 65C T = 65C J J 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 i , INSTANTANEOUS FORWARD F CURRENT (AMPS) i , INSTANTANEOUS FORWARD F CURRENT (AMPS)