MC33151VDR2G ON Semiconductor

MC34151, MC33151 High Speed Dual MOSFET Drivers The MC34151/MC33151 are dual inverting high speed drivers specifically designed for applications that require low current digital circuitry to drive large capacitive loads with high slew rates. These MC34151, MC33151 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage V 20 V CC Logic Inputs (Note 1) V 0.3 to V V in CC Drive Outputs (Note 2) A Totem Pole Sink or Source Current I 1.5 O Diode Clamp Current (Drive Output to V ) I 1.0 CC O(clamp) Power Dissipation and Thermal Characteristics D Suffix SOIC8 Package Case 751 Maximum Power Dissipation T = 50C P 0.56 W A D Thermal Resistance, JunctiontoAir 180 C/W R JA P Suffix 8Pin Package Case 626 Maximum Power Dissipation T = 50C P 1.0 W A D Thermal Resistance, JunctiontoAir R 100 C/W JA Operating Junction Temperature T +150 C J Operating Ambient Temperature T C A MC34151 0 to +70 MC33151 40 to +85 MC33151V 40 to +125 Storage Temperature Range T 65 to +150 C stg Electrostatic Discharge Sensitivity (ESD) (Note 3) ESD V Human Body Model (HBM) 2000 Machine Model (MM) 200 Charged Device Model (CDM) 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V , whichever is less. CC 2. Maximum package power dissipation limits must be observed. 3. ESD protection per JEDEC Standard JESD22A114F for HBM per JEDEC Standard JESD22A115A for MM per JEDEC Standard JESD22C101D for CDM.