MC33152VDR2G ON Semiconductor

MC34152, MC33152, NCV33152 MOSFET Driver, High Speed, Dual The MC34152/MC33152 are dual noninverting high speed drivers specifically designed for applications that require low current digital MC34152, MC33152, NCV33152 MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage V 20 V CC Logic Inputs (Note 1) V 0.3 to +V V in CC Drive Outputs (Note 2) A Totem Pole Sink or Source Current I 1.5 O Diode Clamp Current (Drive Output to V ) I 1.0 CC O(clamp) Power Dissipation and Thermal Characteristics D Suffix, Plastic Package Case 751 Maximum Power Dissipation T = 50C P 0.56 W A D Thermal Resistance, JunctiontoAir R 180 C/W JA P Suffix, Plastic Package, Case 626 Maximum Power Dissipation T = 50C P 1.0 W A D Thermal Resistance, JunctiontoAir R 100 C/W JA Operating Junction Temperature T +150 C J Operating Ambient Temperature MC34152 T 0 to +70 C A Operating Ambient Temperature MC33152 40 to +85 Operating Ambient Temperature MC33152V, NCV33152 40 to +125 Storage Temperature Range T 65 to +150 C stg Electrostatic Discharge Sensitivity (ESD) (Note 3) ESD V Human Body Model (HBM) 2000 Machine Model (MM) 200 Charged Device Model (CDM) 1500 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. For optimum switching speed, the maximum input voltage should be limited to 10 V or V , whichever is less. CC 2. Maximum package power dissipation limits must be observed. 3. ESD protection per following tests: JEDEC Standard JESD22A114F for HBM JEDEC Standard JESD22A115A for MM JEDEC Standard JESD22C101D for CDM.