MC74HC126AD ON Semiconductor

MC74HC125A, MC74HC126A Quad 3-State Noninverting Buffers HighPerformance SiliconGate CMOS MC74HC125A, MC74HC126A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V in CC fields. However, precautions must V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V be taken to avoid applications of any out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA in voltages to this highimpedance cir- I DC Output Current, per Pin 35 mA out cuit. For proper operation, V and in V should be constrained to the out I DC Supply Current, V and GND Pins 75 mA CC CC range GND (V or V ) V . in out CC P Power Dissipation in Still Air SOIC Package 500 mW D Unused inputs must always be TSSOP Package 450 tied to an appropriate logic voltage level (e.g., either GND or V ). T Storage Temperature 65 to +150 C CC stg Unused outputs must be left open. T Lead Temperature, 1 mm from Case for 10 Seconds C L (SOIC or TSSOP Package) 260 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage 0 V V in out CC (Referenced to GND) T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 1) V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.