MC74HC367ADTR2G ON Semiconductor

MC74HC367A Hex 3-State Noninverting Buffer with Separate 2-Bit and 4-Bit Sections HighPerformance SiliconGate CMOS MC74HC367A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to +7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V fields. However, precautions must in CC be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 25 mA out V should be constrained to the out range GND (V or V ) V . I DC Supply Current, V and GND Pins 50 mA CC CC in out CC Unused inputs must always be P Power Dissipation in Still Air, SOIC Package 500 mW D tied to an appropriate logic voltage TSSOP Package 450 level (e.g., either GND or V ). CC Unused outputs must be left open. T Storage Temperature 65 to + 150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V in out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 2.0 V 0 1000 ns r f CC (Figure 2) V = 3.0 V 0 600 CC V = 4.5 V 0 500 CC V = 6.0 V 0 400 CC