MC74HCT245A Octal 3-State Noninverting Bus Transceiver with LSTTL Compatible Inputs HighPerformance SiliconGate CMOS The MC74HCT245A is identical in pinout to the LS245. This MC74HCT245A MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage (Referenced to GND) 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage (Referenced to GND) 0.5 to V + 0.5 V fields. However, precautions must in CC be taken to avoid applications of any V DC Output Voltage (Referenced to GND) 0.5 to V + 0.5 V out CC voltage higher than maximum rated I DC Input Current, per Pin 20 mA voltages to this highimpedance cir- in cuit. For proper operation, V and in I DC Output Current, per Pin 35 mA out V should be constrained to the out range GND (V or V ) V . I DC Supply Current, V and GND Pins 75 mA CC CC in out CC Unused inputs must always be P Power Dissipation in Still Air, PDIP 750 mW D tied to an appropriate logic voltage SOIC Package 500 level (e.g., either GND or V ). CC TSSOP Package 450 Unused outputs must be left open. T Storage Temperature 65 to + 150 C stg T Lead Temperature, 1 mm from Case for 10 Secs C L (PDIP, SOIC, SSOP or TSSOP Package) 260 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Derating Plastic DIP: 10 mW/ C from 65 to 125 C SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 4.5 5.5 V CC V , V DC Input Voltage, Output Voltage 0 V V in out CC (Referenced to GND) T Operating Temperature, All Package Types 55 + 125 C A t , t Input Rise and Fall Time (Figure 1) 0 500 ns r f