MC74LVX541DTR2G ON Semiconductor

MC74LVX541 Octal Bus Buffer The MC74LVX541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74LVX541 is a noninverting type. When either OE1 or OE2 MC74LVX541 FUNCTION TABLE 1 & QE1 EN Inputs 19 Output Y QE2 OE1 OE2 A L L L L 2 18 A1 1 Y1 L L H H 3 17 A2 Y2 H X X Z 4 16 A3 Y3 X H X Z 5 15 A4 Y4 14 6 Y5 A5 7 13 Y6 A6 12 8 A7 Y7 9 11 A8 Y8 Figure 2. IEC Logic Diagram MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to + 7.0 V fields. However, precautions must in be taken to avoid applications of any V DC Output Voltage 0.5 to V + 0.5 V out CC voltage higher than maximum rated I Input Diode Current 20 mA voltages to this highimpedance cir- IK cuit. For proper operation, V and in I Output Diode Current 20 mA OK V should be constrained to the out I DC Output Current, per Pin 25 mA range GND (V or V ) V . in out CC out Unused inputs must always be I DC Supply Current, V and GND Pins 50 mA CC CC tied to an appropriate logic voltage level (e.g., either GND or V ). P Power Dissipation in Still Air, SOIC Packages 500 mW CC D Unused outputs must be left open. TSSOP Package 450 T Storage Temperature 65 to + 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating: SOIC Package: 7 mW/C from 65 to 125C TSSOP Package: 6.1 mW/C from 65 to 125C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 3.6 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage 0 V V out CC T Operating Temperature, All Package Types 40 +85 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.