M MC74VHC1GT126 Noninverting Buffer / CMOS Logic Level Shifter with LSTTLCompatible Inputs The MC74VHC1GT126 is a single gate noninverting 3state buffer fabricated with silicon gate CMOS technology. It achieves high speed MC74VHC1GT126 MAXIMUM RATINGS Symbol Characteristics Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to V + 0.5 V OUT CC I Input Diode Current 20 mA IK I Output Diode Current V < GND V > V +20 mA OK OUT OUT CC I DC Output Current, per Pin +25 mA OUT I DC Supply Current, V and GND +50 mA CC CC P Power Dissipation in Still Air SC 88A, TSOP5 200 mW D Thermal Resistance SC88A, TSOP5 333 C/W JA T Lead Temperature, 1 mm from Case for 10 s 260 C L T Junction Temperature Under Bias +150 C J T Storage Temperature 65 to +150 C stg V ESD Withstand Voltage Human Body Model (Note 1) > 2000 V ESD Machine Model (Note 2) > 200 Charged Device Model (Note 3) N/A I Latchup Performance Above V and Below GND at 125C (Note 4) 500 mA Latchup CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD22A114 A 2. Tested to EIA/JESD22A115 A 3. Tested to JESD22C101A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 3.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage 0.0 V V OUT CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 5.0 V 0.5 V 0 20 ns/V r f CC Device Junction Temperature versus Time to 0.1% Bond Failures Junction FAILURE RATE OF PLASTIC = CERAMIC Temperature C Time, Hours Time, Years UNTIL INTERMETALLICS OCCUR 80 1,032,200 117.8 90 419,300 47.9 100 178,700 20.4 1 110 79,600 9.4 120 37,000 4.2 1 10 100 1000 130 17,800 2.0 TIME, YEARS 140 8,900 1.0 Figure 3. Failure Rate vs. Time Junction Temperature