MC74VHC541 Octal Bus Buffer The MC74VHC541 is an advanced high speed CMOS octal bus buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The MC74VHC541 is a noninverting type. When either OE1 or MC74VHC541 MAXIMUM RATINGS Symbol Parameter Value Unit This device contains protection circuitry to guard against damage V DC Supply Voltage 0.5 to + 7.0 V CC due to high static voltages or electric V DC Input Voltage 0.5 to + 7.0 V in fields. However, precautions must be taken to avoid applications of any V DC Output Voltage 0.5 to V + 0.5 V out CC voltage higher than maximum rated I Input Diode Current 20 mA IK voltages to this highimpedance cir- cuit. For proper operation, V and I Output Diode Current 20 mA in OK V should be constrained to the out I DC Output Current, per Pin 25 mA out range GND (V or V ) V . in out CC Unused inputs must always be I DC Supply Current, V and GND Pins 50 mA CC CC tied to an appropriate logic voltage P Power Dissipation in Still Air, SOIC Package 500 mW D level (e.g., either GND or V ). CC TSSOP Package 450 Unused outputs must be left open. T Storage Temperature 65 to + 150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Derating SOIC Package: 7 mW/ C from 65 to 125 C TSSOP Package: 6.1 mW/ C from 65 to 125 C RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0 5.5 V in V DC Output Voltage 0 V V out CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time V = 3.3V 0.3V 0 100 ns/V r f CC V = 5.0V 0.5V 0 20 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. DC ELECTRICAL CHARACTERISTICS T = 25C T = 55 to 125C A A V CC Min Typ Max Min Max Symbol Parameter Test Conditions V Unit V Minimum HighLevel Input 2.0 1.50 1.50 V IH Voltage 3.0 to 5.5 V x 0.7 V x 0.7 CC CC V Maximum LowLevel Input 2.0 0.50 0.50 V IL Voltage 3.0 to 5.5 V x 0.3 V x 0.3 CC CC V Minimum HighLevel Output V = V or V 2.0 1.9 2.0 1.9 V OH in IH IL Voltage I = 50 A 3.0 2.9 3.0 2.9 OH 4.5 4.4 4.5 4.4 V = V or V in IH IL I = 4mA 3.0 2.58 2.48 OH I = 8mA 4.5 3.94 3.80 OH V Maximum LowLevel Output V = V or V 2.0 0.0 0.1 0.1 V OL in IH IL Voltage I = 50 A 3.0 0.0 0.1 0.1 OL 4.5 0.0 0.1 0.1 V = V or V in IH IL I = 4mA 3.0 0.36 0.44 OL I = 8mA 4.5 0.36 0.44 OL I Maximum Input Leakage V = 5.5V or GND 0 to 5.5 0.1 1.0 A in in Current I Maximum 3State Leakage V = V or V 5.5 0.25 2.5 A OZ in IL IH Current V = V or GND out CC I Maximum Quiescent Supply V = V or GND 5.5 4.0 40.0 A CC in CC Current Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.