X-On Electronics has gained recognition as a prominent supplier of MICROFJ-SMA-30035-GEVB Optical Sensor Development Tools across the USA, India, Europe, Australia, and various other global locations. MICROFJ-SMA-30035-GEVB Optical Sensor Development Tools are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Optical Sensor Development Tools, ensuring timely deliveries around the world.

MICROFJ-SMA-30035-GEVB ON Semiconductor

MICROFJ-SMA-30035-GEVB electronic component of ON Semiconductor
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Part No.MICROFJ-SMA-30035-GEVB
Manufacturer: ON Semiconductor
Category: Optical Sensor Development Tools
Description: Optical Sensor Development Tools J-SERIES 3MM 35U SMA
Datasheet: MICROFJ-SMA-30035-GEVB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 420.5552 ea
Line Total: USD 420.56 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 420.5552
5 : USD 416.3613
10 : USD 412.1939
25 : USD 408.0661
50 : USD 403.9913
100 : USD 399.9561
250 : USD 395.9474
500 : USD 391.9917
1000 : USD 388.0756

0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 420.5552
5 : USD 416.3613
10 : USD 412.1939
25 : USD 408.0661
50 : USD 403.9913
100 : USD 399.9561
250 : USD 395.9474
500 : USD 391.9917
1000 : USD 388.0756

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 357.7825

   
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We are delighted to provide the MICROFJ-SMA-30035-GEVB from our Optical Sensor Development Tools category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MICROFJ-SMA-30035-GEVB and other electronic components in the Optical Sensor Development Tools category and beyond.

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DATA SHEET www.onsemi.com Silicon Photomultipliers (SiPM), High PDE and Timing Resolution Sensors in a TSV Package J-Series SiPM Sensors onsemis J-Series low-light sensors feature a high PDE (photon detection efficiency) that is achieved using a high-volume, P-on-N silicon foundry process. The J-Series sensors incorporate major improvements in the transit time spread which results in a significant improvement in the timing performance of the sensor. J-Series sensors ORDERING INFORMATION See detailed ordering and shipping information on page 11 of are available in different sizes (3 mm, 4 mm and 6 mm) and use a TSV this data sheet. (Through Silicon Via) process to create apackage with minimal deadspace, that is compatible with industry standard lead-free, reflow soldering processes. The J-Series Silicon Photomultipliers (SiPM) combine high performance with the practical advantages of solid-state technology: low operating voltage, excellent temperature stability, robustness, compactness, output uniformity, and low cost. For more information on the J-Series sensors please refer to the website. Table 1. GENERAL PARAMETERS Parameter (Note 1) Minimum Typical Maximum Unit 24.2 24.7 V Breakdown Voltage (Vbr) (Note 2) Overvoltage (OV) 1 6 V Operating Voltage (Vop = Vbr + OV)) 25.2 30.7 V Spectral Range (Note 3) 200 900 nm Peak PDE Wavelength ( p) 420 nm Temperature dependence of Vbr 21.5 mV/C 1. All measurements made at 21C unless otherwise stated. 2. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the bias voltage. 3. The range where PDE > 2.0% at Vbr + 6.0 V. Table 2. PHYSICAL PARAMETERS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 Parameter 2 2 2 Active Area 3.07 3.07 mm 3.93 3.93 mm 6.07 6.07 mm No. of Microcells 30020: 14,410 40035: 9,260 60035: 22,292 30035: 5,676 Microcell Fill Factor 30020: 62% 40035: 75% 60035: 75% 30035: 75% Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2021 Rev. 7 MICROJSERIES/DJSeries SiPM Sensors Table 3. PERFORMANCE PARAMETERS 30035 40035 60035 Unit Overvoltage +2.5 V +6 V +2.5 V +6 V +2.5 V +6 V Parameter (Note 4) Unit PDE (Note 5) 38 50 38 50 38 50 % 2 Dark Count Rate 50 150 50 150 50 150 kHz/mm 6 6 6 6 6 6 Gain (anode-cathode) 2.9 10 6.3 10 2.9 10 6.3 10 2.9 10 6.3 10 A Dark Current typical 0.23 1.9 0.35 3.0 0.9 7.5 Dark Current maximum 0.31 3.00 0.45 4.0 1.25 12.0 Rise Time (Note 6) anode-cathode output 90 110 90 110 180 250 ps Microcell Recharge Time Constant (Note 7) 45 48 50 ns Capacitance (Note 8) (anode output) 1070 1800 4140 pF Capacitance (Note 8) (fast output) 40 70 160 pF Fast Output Pulse Width (FWHM) 1.5 1.7 3.0 ns Crosstalk 8 25 8 25 8 25 % Afterpulsing 0.75 5.0 0.75 5.0 0.75 5.0 % 30020 Overvoltage +2.5 V +5 V Parameter (Note 4) Unit PDE (Note 5) 30 38 % 2 Dark Count Rate 50 125 kHz/mm 6 6 Gain (anode-cathode) 1.0 10 1.9 10 A Dark Current typical 0.1 0.45 Dark Current maximum 0.2 0.72 Rise Time (Note 6) anode-cathode output 130 160 ps Microcell Recharge Time Constant (Note 7) 15 ns Capacitance (Note 8) (anode output) 1040 pF Capacitance (Note 8) (fast output) 50 pF Fast Output Pulse Width (FWHM) 1.4 ns Crosstalk 2.5 7.5 % Afterpulsing 0.75 5.0 % 4. All measurements made at 21C unless otherwise stated. 5. PDE does not contain afterpulsing or crosstalk, and is quoted at the peak wavelength ( ). p 6. Measured as time to go from 10% to 90% of the peak amplitude and measured over a 1 series output resistor. 7. RC charging time constant of the microcell (). 8. Capacitance values are for the complete TSV package. Table 4. TVS PACKAGE SPECIFICS 3 mm 4 mm 6 mm 30020, 30035 40035 60035 2 2 2 Package Dimensions 3.16 3.16 mm 4.00 4.00 mm 6.13 6.13 mm Recommended Operating Temperature Range 40C +85C Soldering Conditions Reflow Solder Cover Material Glass Cover Refractive Index 1.53 436 nm Moisture Sensitivity Level Tape & reel MSL3* Cut tape MSL4* Maximum Average Current 10 mA 10 mA 15 mA *Please refer to the TSV Handling and Soldering guide for more information on MSL for different delivery options. www.onsemi.com 2

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8543.70.00 - Other machines and apparatus Free
13 No Signal processors (graphic equalisers, crossovers etc.)
91 .. Other

9027.10.00 Instruments and apparatus for physical or chemical analysis (for example, polarimeters, refractometers, spectrometers, gas or smoke analysis apparatus); instruments and apparatus for measuring or checking viscosity, porosity, expansion, surface tension or the like; instruments and apparatus for measuring or checking quantities of heat, sound or light (including exposure meters); microtomes.

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ON SEMI
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ON SEMICONDUCTOR
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onsemi
ON-SEMI
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OOF
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