RB-Series DATASHEET SensLs Second Generation of Red-Enhanced Silicon Photomultipliers MicroRB sensors are the second release of Silicon SiPM sensors are an improvement over avalanche Photomultipliers (SiPM) from SensLs R-Series range. The photodiodes (APD) and PIN diodes due to their high gain and MicroRB sensors provide further sensitivity improvements in single photon sensitivity. This enables the detection of low the red and NIR region of the electromagnetic spectrum. All reflectivity targets at very long distance in LiDAR applications. R-Series SiPM sensors feature high responsivity, fast signal Unlike the similarly-operated SPAD that can only detect single response and a low temperature coefficient of operating photons, the SiPM overcomes this limitation by incorporating voltage, all achieved at a low bias voltage. The sensor is a microcell structure that allows for multi-photon detection packaged in a compact and robust MLP (molded lead frame) with a high dynamic range. It is strongly recommended that package that is suitable for reflow solder processes. Both the those new to SiPM sensors consult the Introduction to Silicon sensor and the package are designed for volume production Photomultipliers Tech Note. with the product delivered on tape and reel. GENERAL PARAMETERS 1 Parameter Microcell Size Minimum Typical Maximum Units 10 mm 27.1 2, 3 Breakdown Voltage (Vbr) V 20 mm 23.2 35 mm 23.0 4 Breakdown Voltage Range 0.5 V 10 mm 20 20 2, 4 Overvoltage (Vov) V 20 mm 10 15 35 mm 7 10 5 Spectral Range 300 1050 nm 1 All measurements made at 21C unless otherwise stated. current and V is the bias voltage. 2 4 Operating bias (Vbias) = Vbr + Vov For a given lot. Specific information is given in the lot Release 3 The breakdown voltage (Vbr) is defined as the value of the voltage Note. Contact SensL Sales for information. 5 intercept of a straight line fit to a plot of I vs V, where I is the Range at which the maximum PDE is >1%. PHYSICAL PARAMETERS Parameter 10010 10020 10035 Active area 1 mm x 1 mm Microcell size 10 mm x 10 mm 20 mm x 20 mm 35 mm x 35 mm Number of microcells 4296 1590 620 Microcell fill factor 43 % 63 % 76 % 1RB-Series DATASHEET PERFORMANCE PARAMETERS 6 Parameter 10010 10020 10035 Units 7, 8 PDE 905 nm maximum overvoltage 4.0 7.3 10.3 % 6, 7 PDE 905 nm typical overvoltage 4.0 5.6 9.1 % 8 Responsivity 905 nm maximum overvoltage 52 270 420 kA/W 6 Responsivity 905 nm typical overvoltage 52 61 240 kA/W 6 6 6 6 Gain - cathode-anode output 0.7 x 10 0.9 x 10 1.7 x 10 6 , 9 Dark count rate 2.5 2.7 3.8 MHz 6 Dark current 0.52 0.54 1.5 mA 6, 10 Rise time - standard output 1.5 1.0 0.9 ns 6, 10, 11 Microcell recharge time constant 12 21 73 ns 6, 10 Rise time - fast output 490 490 490 ps 6, 10 Fast output pulse width (FWHM) 2.3 2.0 3.7 ns 6 Crosstalk 30 22 33 % 6 Afterpulsing 13 6 1 % 6 Excess noise factor 1.34 1.19 1.22 Temperature coefficient of Vbr See page 4 6 o 9 All measurements made at 21 C and Typical overvoltage (see page 1) Each thermally generated noise carrier in the active volume of the sensor unless otherwise specified. will generate a signal equal to that of a single photon. The rate of these 7 spurious counts is referred to as the dark count rate. PDE (Photon Detection Efficiency) is the product of the QE *AIP*FF , where 10 All timing measurements acquired using a SensL SMA board, see page QE is quantum efficiency, AIP is the avalanche initiation probability and FF is 6. the fill factor of the microcells. 11 8 RC charging time constant of the microcell (t). Measured at maximum overvoltage. PACKAGE PARAMETERS Parameter 10010 10020 10035 Package dimensions 1.5 mm x 1.8 mm Lead-free, reflow soldering process compatible Soldering conditions See the SMT Handling Tech Note for more details. Encapsulant type Clear transfer molding compound Encapsulant refractive index 1.57 589 nm MSL 3 for tape & reel (TR) Moisture sensitivity level (MSL) MSL 4 for tape only (TA) ABSOLUTE MAXIMUM RATINGS 10010 10020 10035 Maximum current 3 mA o o Recommended operating temperature range -40 C - +85 C o Maximum storage temperature 105 C 2