DATA SHEET www.onsemi.com Silicon Photomultipliers (SiPM), Red-Enhanced Second Generation Advance Information RB-Series SiPM Sensors RBSeries sensors are the second release of Silicon Photo multipliers (SiPM) from onsemis R-Series range. These sensors provide further sensitivity improvements in the red and NIR region of the electromagnetic spectrum. All R-Series SiPM sensors feature high responsivity, fast signal response and a low temperature coefficient of operating voltage, all achieved at a low bias voltage. The sensor is ORDERING INFORMATION packaged in a compact and robust MLP (molded lead frame) package See detailed ordering and shipping information on page 10 of that is suitable for reflow solder processes. Both the sensor and the this data sheet. package are designed for volume production with the product delivered on tape and reel. SiPM sensors are an improvement over avalanche photodiodes (APD) and PIN diodes due to their high gain and single photon sensitivity. This enables the detection of low reflectivity targets at very long distance in LiDAR applications. Unlike the similarly-operated SPAD that can only detect single photons, the SiPM overcomes this limitation by incorporating a microcell structure that allows for multi-photon detection with a high dynamic range. It is strongly recommended that those new to SiPM sensors consult the Introduction to Silicon Photomultipliers application note. Table 1. GENERAL PARAMETERS Parameter (Note 1) Microcell Size Minimum Typical Maximum Unit Breakdown Voltage (Vbr) 10 m 27 V (Notes 2, 3, 4) 20 m 23 35 m 25 Overvoltage (Vov) 10 m 20 20 V (Notes 2, 4) 20 m 10 15 35 m 7 10 Spectral Range (Note 5) 300 1050 nm 1. All measurements made at 21C unless otherwise stated. 2. Operating bias (Vbias) = Vbr + Vov 3. The breakdown voltage (Vbr) is defined as the value of the voltage intercept of a straight line fit to a plot of I vs V, where I is the current and V is the bias voltage. 4. Specific Vbr and Vov information for a given lot is available in the lot release note. The lot number is given on the product packaging. 5. Range at which the maximum PDE is > 1%. Table 2. PHYSICAL PARAMETERS Parameter 10010 10020 10035 Active Area 1 mm 1 mm Microcell Size 10 m 10 m 20 m 20 m 35 m 35 m Number of Microcells 4296 1590 620 Microcell Fill Factor 43% 63% 76% This document contains information on a new product. Specifications and information herein are subject to change without notice. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: August, 2021 Rev. 6 MICRORBSERIES/DRBSeries SiPM Sensors Table 3. PERFORMANCE PARAMETERS Parameter (Note 6) 10010 10020 10035 Unit PDE 905 nm Maximum Overvoltage (Notes 7, 8) 4.0 7.3 10.3 % PDE 905 nm Typical Overvoltage (Notes 6, 7) 4.0 5.6 9.1 % Responsivity 905 nm Maximum Overvoltage (Note 8) 52 270 420 kA/W Responsivity 905 nm Typical Overvoltage (Note 6) 52 61 240 kA/W 6 6 6 Gain Cathode-anode Output (Note 6) 0.7 10 0.9 10 1.7 10 Dark Count Rate (Notes 6, 9) 2.5 2.7 2.6 MHz Dark Current (Note 6) 0.52 0.54 A 1.5 Rise Time Standard Output (Notes 6, 10) 1.5 1.0 0.9 ns Microcell Recharge Time Constant (Notes 6, 10, 11) 12 21 73 ns Rise Time Fast Output (Notes 6, 10) 490 490 490 ps Fast Output Pulse Width (FWHM) (Notes 6, 10) 2.3 2.0 3.7 ns Crosstalk (Note 6, 12) 30 22 43 % Afterpulsing (Note 6) 13 6 1 % Excess Noise Factor (Note 6) 1.34 1.19 1.22 Temperature Coefficient of Vbr See page 5 6. All measurements made at 21C and Typical overvoltage (see page 1) unless otherwise specified. 7. PDE (Photon Detection Efficiency) is the product of the QE * AIP * FF, where QE is quantum efficiency, AIP is the avalanche initiation probability and FF is the fill factor of the microcells. 8. Measured at maximum overvoltage. 9. Each thermally generated noise carrier in the active volume of the sensor will generate a signal equal to that of a single photon. The rate of these spurious counts is referred to as the dark count rate. 10.All timing measurements acquired using an onsemi SMA board, see page 6. 11. RC charging time constant of the microcell (). 12.A lower overvoltage can be used to achieve lower crosstalk. Table 4. PACKAGE PARAMETERS Parameter 10010 10020 10035 Package Dimensions 1.5 mm 1.8 mm Soldering Conditions Lead-free, reflow soldering process compatible. See the SMT Handling application note for more details Encapsulant Type Clear transfer molding compound Encapsulant Refractive Index 1.57 589 nm Moisture Sensitivity Level (MSL) MSL 3 for tape & reel (TR) MSL 4 for tape only (TR1) Table 5. ABSOLUTE MAXIMUM RATINGS Rating 10010 10020 10035 Maximum Average Current 3 mA Recommended Operating Temperature Range 40C to +85C Maximum Storage Temperature 105C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. www.onsemi.com 2