MJ802 HighPower NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100Watts music power per channel. Features MJ802 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BV 100 Vdc CER (I = 200 mAdc, R = 100 ) C BE CollectorEmitter Sustaining Voltage (Note 1) (I = 200 mAdc) V 90 Vdc CEO(sus) C I mAdc CollectorBase Cutoff Current CBO 1.0 (V = 100 Vdc, I = 0) CB E 5.0 (V = 100 Vdc, I = 0, T = 150 C) CB E C EmitterBase Cutoff Current I 1.0 mAdc EBO (V = 4.0 Vdc, I = 0) BE C (1) ON CHARACTERISTICS DC Current Gain (Note 1) h 25 100 FE (I = 7.5 Adc, V = 2.0 Vdc) C CE BaseEmitter On Voltage V 1.3 Vdc BE(on) (I = 7.5 Adc, V = 2.0 Vdc) C CE CollectorEmitter Saturation Voltage V 0.8 Vdc CE(sat) (I = 7.5 Adc, I = 0.75 Adc) C B BaseEmitter Saturation Voltage V 1.3 Vdc BE(sat) (I = 7.5 Adc, I = 0.75 Adc) C B DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 2.0 MHz T (I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz) C CE 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 200 150 100 50 0 160 0 20 40 60 80 100 120 140 180 200 T , CASE TEMPERATURE (C) C Figure 1. PowerTemperature Derating Curve