MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for highvoltage power switching in inductive circuits. Features MJB5742T4G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage (I = 50 mA, I = 0) V 400 Vdc C B CEO(sus) Collector Cutoff Current (V = Rated Value, V = 1.5 Vdc) I 1 mAdc CEV BE(off) CEV (V = Rated Value, V = 1.5 Vdc, T = 100 C) 5 CEV BE(off) C Emitter Cutoff Current (V = 8 Vdc, I = 0) I 75 mAdc EB C EBO SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I See Figure 6 S/b Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 7 ON CHARACTERISTICS (Note 2) DC Current Gain (I = 0.5 Adc, V = 5 Vdc) h 50 100 C CE FE (I = 4 Adc, V = 5 Vdc) 200 400 C CE CollectorEmitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc) V 2 Vdc C B CE(sat) CollectorEmitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc) 3 C B CollectorEmitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T = 100 C) 2.2 C B C BaseEmitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc) V 2.5 Vdc C B BE(sat) BaseEmitter Saturation Voltage (I = 8 Adc, I = 0.4 Adc) 3.5 C B BaseEmitter Saturation Voltage (I = 4 Adc, I = 0.2 Adc, T = 100 C) 2.4 C B C Diode Forward Voltage (Note 3) (I = 5 Adc) V 2.5 Vdc F f SWITCHING CHARACTERISTICS Typical Resistive Load (Table 1) Delay Time t 0.04 s d (V = 250 Vdc, I = 6 A Rise Time CC C(pk) t 0.5 s r I = I = 0.25 A, t = 25 s, B1 B2 p Storage Time t 8 s s Duty Cycle 1%) Fall Time t 2 s f Inductive Load, Clamped (Table 1) Voltage Storage Time t 4 s sv (I = 6 A, V = 250 Vdc C(pk) CE(pk) I = 0.06 A, V = 5 Vdc) Crossover Time B1 BE(off) t 2 s c 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2%. 3. The internal CollectortoEmitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the Forward Recovery Voltage (V ) of this diode is comparable to that of typical fast recovery rectifiers. f