MJ11022G ON Semiconductor

MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and MJ11021(PNP) MJ11022 (NPN) R and R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C D MUST BE FAST RECOVERY TYPE, e.g.: 1 V CC 200 1N5825 USED ABOVE I 100 mA B 100 V MSD6100 USED BELOW I 100 mA B R C SCOPE TUT 150 V2 R B APPROX +12 V D 51 1 10 K 8.0 100 0 V1 + 4.0 V APPROX 25 s 50 - 8.0 V for t and t , D is disconnected d r 1 and V2 = 0 t , t 10 ns r f DUTY CYCLE = 1.0% 0 0 25 50 75 100 125 150 175 200 For NPN test circuit reverse diode and voltage polarities. T , CASE TEMPERATURE (C) C Figure 1. Power Derating Figure 2. Switching Times Test Circuit ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 0.1 Adc, I = 0) MJ11021, MJ11022 250 C B Collector Cutoff Current I mAdc CEO (V = 125, I = 0) MJ11021, MJ11022 1.0 CE B Collector Cutoff Current I mAdc CEV (V = Rated V , V = 1.5 Vdc) 0.5 CE CB BE(off) (V = Rated V , V = 1.5 Vdc, T = 150 C) 5.0 CE CB BE(off) J Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 10 Adc, V = 5.0 Vdc) 400 15,000 C CE (I = 15 Adc, V = 5.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 Adc, I = 100 mA) 2.0 C B (I = 15 Adc, I = 150 mA) 3.4 C B BaseEmitter On Voltage V 2.8 Vdc BE(on) I = 10 A, V = 5.0 Vdc) C CE BaseEmitter Saturation Voltage V 3.8 Vdc BE(sat) (I = 15 Adc, I = 150 mA) C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product h 3.0 Mhz fe (I = 10 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C pF CB E ob MJ11022 400 MJ11021 600 SmallSignal Current Gain h 75 fe (I = 10 Adc, V = 3.0 Vdc, f = 1.0 kHz) C CE SWITCHING CHARACTERISTICS Typical Characteristic Symbol NPN PNP Unit Delay Time t 150 75 ns d Rise Time t 1.2 0.5 s r (V = 100 V, I = 10 A, I = 100 mA CC C B V = 50 V) (See Figure 2) BE(off) Storage Time t 4.4 2.7 s s Fall Time t 10.0 2.5 s f 1. Pulsed Test: Pulse Width = 300 s, Duty Cycle 2%.