MJ11032G ON Semiconductor

MJ11032G electronic component of ON Semiconductor
MJ11032G ON Semiconductor
MJ11032G Darlington Transistors
MJ11032G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJ11032G Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. MJ11032G Darlington Transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. MJ11032G
Manufacturer: ON Semiconductor
Category: Darlington Transistors
Description: Bipolar (BJT) Transistor NPN - Darlington 120 V 50 A 300 W Through Hole TO-204 (TO-3)
Datasheet: MJ11032G Datasheet (PDF)
Price (USD)
1: USD 15.48 ea
Line Total: USD 15.48 
Availability : 970
  
Ship by Mon. 04 Aug to Wed. 06 Aug
QtyUnit Price
1$ 15.48
10$ 10.802
100$ 10.23

Availability 970
Ship by Mon. 04 Aug to Wed. 06 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 15.48
10$ 10.802
100$ 10.23


Availability 68
Ship by Wed. 13 Aug to Mon. 18 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 17.0726
10$ 14.6742
30$ 11.9823
100$ 10.9391

   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MJ11032G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJ11032G and other electronic components in the Darlington Transistors category and beyond.

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MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon MJ11028, MJ11030, MJ11032 (NPN) COLLECTOR COLLECTOR PNP NPN MJ11029 MJ11028 MJ11033 MJ11030 MJ11032 BASE BASE 3.0 k 25 3.0 k 25 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 1) MJ11028, MJ11029 V 60 Vdc (BR)CEO (I = 1 00 mAdc, I = 0) MJ11030 90 C B MJ11032, MJ11033 120 CollectorEmitter Leakage Current I mAdc CER (V = 60 Vdc, R = 1 k ) MJ11028, MJ11029 2 CE BE (V = 90 Vdc, R = 1 k ) MJ11030 2 CE BE (V = 120 Vdc, R = 1 k ) MJ11032, MJ11033 2 CE BE 10 (V = 60 Vdc, R = 1 k , T = 150 C) MJ11028, MJ11029 CE BE C 10 (V = 120 Vdc, R = 1 k , T = 150 C) MJ11032, MJ11033 CE BE C Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 5 BE C CollectorEmitter Leakage Current I mAdc CEO (V = 50 Vdc, I = 0) 2 CE B ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 25 Adc, V = 5 Vdc) 1 k 18 k C CE (I = 50 Adc, V = 5 Vdc) 400 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 25 Adc, I = 250 mAdc) 2.5 C B (I = 50 Adc, I = 500 mAdc) 3.5 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 25 Adc, I = 200 mAdc) 3.0 C B (I = 50 Adc, I = 300 mAdc) 4.5 C B 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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