MPSA13 NPN Darlington Transistor July 2007 MPSA13 NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings T = 25C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CES V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 10 V EBO I Collector Current - Continuous 1.2 A C T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage I = 100A, I = 0 30 V (BR)CES C B I Collector-Cutoff Current V = 30V, I = 0 100 nA CBO CB E I Emitter-Cutoff Current V = 10V, I = 0 100 nA EBO EB C On Characteristics * h DC Current Gain V = 5.0V, I =10mA 5,000 FE CE C V = 5.0, I = 100mA 10,000 CE C V Collector-Emitter Saturation Voltage I = 100mA, I = 0.1mA 1.5 V CE (sat) C B V Base-Emitter On Voltage I = 100mA,V = 5.0V 2.0 V BE (on) C CE Small Signal Characteristics f Current Gain Bandwidth Product I = 10mA, V = 10V, f = 100MHz 125 pF T C CE * Pulse Test: Pulse Width300s, Duty Cycle2% 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MPSA13 Rev. AMPSA13 NPN Darlington Transistor Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25C 5.0 mW/C R Thermal Resistance, Junction to Case 83.3 C/W JC R Thermal Resistance, Junction to Ambient 200 C/W JA * Device mounted on FR-4PCB 1.6 1.6 0.06. Typical Characteristics 2 www.fairchildsemi.com MPSA13 Rev. A