MPSA27 Darlington Transistor NPNSilicon Features These are Pb--Free Devices* MPSA27 ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFFCHARACTERISTICS Collector--Emitter Breakdown Voltage V 60 -- -- Vdc (BR)CES (I = 100 mAdc, V =0) C BE Collector--Base Breakdown Voltage V 60 -- -- Vdc (BR)CBO (I = 100 mAdc, I =0) C E Collector Cutoff Current I -- -- 100 nAdc CBO (V =30V,I =0) CB E (V =40V,I =0) CB E (V =50V,I =0) CB E Collector Cutoff Current I -- -- 500 nAdc CES (V =30V,V =0) CE BE (V =40V,V =0) CE BE (V =50V,V =0) CE BE Emitter Cutoff Current I -- -- 100 nAdc EBO (V =10Vdc) EB ONCHARACTERISTICS (Note 1) DC Current Gain h -- FE (I =10mA,V =5.0V) 10,000 -- -- C CE (I = 100 mA, V =5.0V) 10,000 -- -- C CE Collector--Emitter Saturation Voltage V -- -- 1.5 Vdc CE(sat) (I = 100 mA, I =0.1mAdc) C B Base--Emitter On Voltage V -- -- 2.0 Vdc BE(on) = 100 mA, V =5.0Vdc) (I C CE SMALL--SIGNALCHARACTERISTICS Small Signal Current Gain h 1.25 2.4 -- -- fe (I =10mA,V =5.0V,f=100MHz) C CE 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.